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Optical Systems

Reflectors-for-photolithographic-projection-and-related-systems-and-methods

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Reflectors for photolithographic projection and related systems and methods

Details

Inventors: Kim, Cheol-hong; Sohn, Chang-jin;
Assignee: Samsung Electronics Co., Ltd. (KR)
Primary Examiner: Codd; Bernard
Assistant Examiner:
Attorney, Agent or Firm: Myers Bigel Sibley & Sajovec

A photolithographic projection system for selectively irradiating a photosensitive layer on a wafer according to a predetermined pattern on a mask is discussed. The photolithographic projection system includes a radiation source which generates radiation such as light. A reflector reflects the radiation from the radiation source on a path which intersects the wafer. This reflector includes a radiation reflecting portion and a phase-shifting and partially reflecting portion adjacent the radiation reflecting portion. The reflecting portion may include a plurality of reflecting portions surrounded by the absorbing portion, or the reflecting portion may surround the absorbing portion. Alternately, the reflector may include a reflecting portion and an absorbing portion adjacent the reflecting portion. Related methods are also discussed.

DETAILED DESCRIPTION It is therefore an object of the present invention to provide improved photolithographic projection systems.
It is another object of the present invention to provide improved reflectors for a photolithographic projection system.
It is still another object of the present invention to provide improved methods for fabricating reflectors for photolithographic projection systems.
These and other objects are provided according to the present invention by a reflector including a light reflecting portion and a light absorbing portion adjacent the light reflecting portion.
The light reflecting portion may include a plurality of light reflecting portions surrounded by the light absorbing portion, or the light reflecting portion may surround the light absorbing portion.
Alternately, the reflector may include a light reflecting portion and a phase-shifting and partially reflecting portion adjacent the light reflecting portion.
Projection systems using these reflectors can thus provide a uniform light intensity and irradiating angle to a wafer being exposed.
In addition, diffraction of the light provided to the wafer can be reduced.
Accordingly, the uniformity of line widths formed on the wafer can be increased.
The light reflecting portions preferably have a reflectivity on the order of at least 80%.
The phase-shifting and partially reflecting portions may have a reflectivity on the order of 5-30% and may shift a phase of light reflected therefrom on the order of 90-270.
degree.
.
Most preferably, the phase is shifted 180.
degree.
.
According to another aspect of the present invention, a method for fabricating a reflector for a photolithographic projection system includes the steps of selectively forming a light absorbing layer on a first portion of a substrate and selectively forming a light reflecting layer on a second portion of the substrate.
The light reflecting layer may surround the light absorbing layer to thereby provide an annular reflector.
Alternately, a method for fabricating a reflector for a photolithographic projection system may include the steps of forming a groove in the substrate, selectively forming a first light reflecting layer in the groove, and selectively forming a second light reflecting layer on the substrate around the groove

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