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| Electronic cooling |
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| Laminated capacitor of feed-through type |
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| Magneto-optic light deflector system |
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| Solid state laser device for lithography light source and semiconductor lithography method |
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| Apparatus for cooling integrated circuit chips |
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| Cooled stack of electrically isolated semiconductors |
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Blue light-emitting device
| Details |
Inventors: Nitta, Koichi;
Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP)
Primary Examiner: Jackson; Jerome
Assistant Examiner:
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
There is disclosed a blue light emitting device having a laminated structure, which comprises a buffer layer made of a first conductivity type GaN-based semiconductor, a first cladding layer made of the first conductivity type GaN-based semiconductor, an active layer made of a substantially intrinsic GaN-based semiconductor, and a second cladding layer made of a second conductivity type GaN-based semiconductor, on a conductive substrate such as a conductive sapphire substrate. The GaN-based semiconductors of the present invention are made of quaternary compound semiconductor layers, and preferably made of In.sub.x A.sub.y Ga.sub.1-x-y N whose mole fraction values x, y satisfy 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1. The mole fraction values x, y are selected to obtain desired luminous wavelength and intensity. |
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DETAILED DESCRIPTION An object of the present invention is to provide a blue light emitting device capable of adjusting wavelength freely without reducing intensity of the light to be generated.
Another object of the present invention is to provide a blue light emitting device a chip size of which can be reduced.
Still another object of the present invention is to provide a blue light emitting device which may be manufactured by virtue of simple manufacturing steps.
Yet still another object of the present invention is to provide a blue light emitting device which is fitted for an integrated circuit.
In order to attain the above objects, the blue light-emitting device according to the present invention is chracterized by comprising quaternary compound semiconductor layers shown in FIG.
2.
In other words, the blue light-emitting device such as LED according to the present invention has a laminated structure in which, on a conductive substrate 100 are formed in sequence a buffer layer 101 made of a first conductivity type GaN-based semiconductor, a first cladding layer 102 made of a first conductivity type GaN-based semiconductor, an active layer 103 made of a GaN-based semiconductor which is substantially intrinsic, i.
e.
, in which impurity is not doped intentionally, and a second cladding layer 104 made of a second conductivity type GaN-based semiconductor which has opposite conductivity to the first conductivity.
An upper electrode 105 is formed on the second cladding layer 104, while a lower electrode 106 is formed almost on the overall bottom surface of the conductive substrate 100.
These GaN-based compound semiconductors are formed of quaternary compound semiconductor of In.
sub.
x Al.
sub.
y Ga.
sub.
1-x-y N.
Respective mole fraction x, y are selected as predetermined values to satisfy 0.
ltoreq.
x.
ltoreq.
1, 0.
ltoreq.
y.
ltoreq.
1 and x+y 1.
For example, the first conductivity type signifies n-type while the second conductivity signifies p-type conductivity.
But the n-type and the p-type may be reversed
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Quantum Computing 
