 Apparatus for integrating steps of a process for interconnecting optical fibers |
| The present invention is therefore directed to an integrated and automated optical fiber ... |
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| Sheathed optical fiber cutting method and apparatus |
| What is claimed is: 1. A sheathed optical fiber cutting method for cutting the sheathed optical ... |
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| Method and apparatus for cleaning an optical fiber |
| According to one illustrated embodiment, an automated cleaning device for cleaning a portion of an ... |
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| Rare-earth doped optical fiber module and manufacturing method therefor |
| It is therefore an object of the present invention to provide a rare-earth doped optical fiber ... |
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| Layered III-V semiconductor structures and light emitting devices including the structures |
| Accordingly, it is an object of the present invention to provide improved layered semiconductor ... |
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| Method for producing quantization functional device |
| The quantization functional device of this invention includes a silicon thin layer having a first ... |
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| Semiconductor device and method of fabricating the same |
| It is an object of the present invention to provide a quantum semiconductor device having a new ... |
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| Method of making an optically nonlinear switched optical device and related devices |
| These and other needs are satisfied by the present invention which provides a method for making a ... |
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| Reversible thermoelectric converter |
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| Interband lateral resonant tunneling transistor |
| It is the objective of this invention to provide a resonant tunneling device based on resonant ... |
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Compound semiconductor light emitting device and method of preparing the same
| Details |
Inventors: Miura, Yoshiki; Matsubara, Hideki; Matsushima, Masato; Seki, Hisashi; Koukitu, Akinori;
Assignee: Sumitomo Electric Industries, Ltd. (Osaka, JP)
Primary Examiner: Meier; Stephen
Assistant Examiner: Soward; Ida M.
Attorney, Agent or Firm: Fasse; W. G., Fasse; W. F.
A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.sub.x Ga.sub.1-x N (0.ltoreq.x<1) which is formed on the buffer layer, an incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer, a light emiting layer which is formed on the epitaxial layer, and a cladding layer which is formed on the light emitting layer. The buffer layer is formed by organic metal chloride vapor phase epitaxy at a first temperature, while the epitaxial layer is formed by organic metal chloride vapor phase epitaxy at a second temperature which is higher than the first temperature. The light emitting layer preferably consists of In.sub.y Ga.sub.1-y N (0<y<1) which is doped with Mg. |
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DETAILED DESCRIPTION An object of the present invention is to provide a compound semiconductor light emitting device of high performance solving the aforementioned problems, and a method which can industrially prepare the same.
According to an aspect of the present invention, a compound semiconductor light emitting device is provided.
This compound semiconductor light emitting device such as a light emitter diode includes a substrate of a compound semiconductor which is selected from a group consisting of GaAs, GaP, InAs and InP, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.
sub.
x Ga.
sub.
1-x N (0.
ltoreq.
x<1) which is formed on the buffer layer, an incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer, a light emitting layer which is formed on the epitaxial layer, and a or cladding layer which is formed on the light emitting layer.
The incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer may conceivably result from a deviation of the respective crystal lattices caused by the difference between the growth temperatures of the buffer layer and the epitaxial layer, for example.
This incommensurate plane can be observed as the difference in contrast between the buffer layer and the epitaxial layer through sectional observation with a transmission electron microscope.
In the compound semiconductor light emitting device, preferably the epitaxial layer consists of Al.
sub.
x Ga.
sub.
1-x N (0.
ltoreq.
x<1) having a first conductivity type, the light emitting layer consists of In.
sub.
y Ga.
sub.
1-y N (0<y<1) and the clad or cladding layer consists of Al.
sub.
z Ga.
sub.
1-z N (0.
ltoreq.
z<1) having a second conductivity type which is different from the first conductivity type.
When the light emitting layer consisting of In.
sub.
y Ga.
sub.
1-y N is not doped with an emission center such as Zn, band-edge emission of luminescent colors of violet, blue, green and yellow, i
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