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Method for dry etching vias in integrated circuit layers
OF THE DRAWINGS Referring to FIG. 1, a schematic representation of an etching apparatus according to the present invention is shown and is generally designated 100. A...
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Process for forming a buried drain or collector region in monolithic semiconductor devices
The process in accordance with the invention aims at overcoming the above drawbacks. A first innovative process embodiment comprises the following steps: growing on a ...
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Golf ball
OF THE INVENTION The present invention is directed to improved core construction and several methods for improving core construction. Broadly, the golf ball core of the ...
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Optoelectronic switching and display device with porous silicon
It is a principal object of the present invention to overcome the above shortcomings by providing a solid state optoelectronic switching and display device for high ...
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Method of forming porous silicon
It is an object of the present invention to provide a process for manufacturing porous silicon having a high degree of uniformity. Another object of the invention is to ...
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Lightweight neutron detector
What is claimed is: 1. In a neutron detector including a metallic encasement containing a neutron detecting gas and further including a moderator material disposed on ...
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Method of forming a salicided self-aligned metal oxide semiconductor device using a disposable silicon nitride spacer
A method of fabricating a SALICIDED complementary metal oxide semiconductor utilizing a very thin oxide spacer and a disposable nitride layer is disclosed. The method of ...
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Method of fabricating semiconductor devices and integrated circuits using sidewall spacer technology
In accordance with one aspect of the invention, the base layer of sidewall spacer of a semiconductor device or integrated circuit comprises a composite multi-layered ...
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Structure and method for manufacturing improved FETs having T-shaped gates
In view of the above, the invention is to provide a structure and method for manufacturing improved FETs having T-shaped gates which not only decrease the parasitic ...
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Method of fabricating a self-aligned silicide MOSFET
It is therefore an object of the invention to provide a reverse T-gate MOSFET device. The T-gate device possesses a wide, shallow junction to protect the device from the ...
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