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Method of joining beam leads with projections to device electrodes
It is, accordingly, a primary object of this invention to provide a method of manufacturing a semiconductor device which can solve the abovestated problems of ...
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Semiconductor device and process for producing the same, and tape carrier used in said process
For the recent semiconductor devices, the higher reliability is required. To this end, the aging is achieved as a reliability test in which a semiconductor device is ...
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Process for self aligning a source region with a field oxide region and a polysilicon gate
A method and apparatus for self-aligning a source diffusion to field oxide regions, poly word lines and gate edges is disclosed. In the following description, numerous ...
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Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers
The present invention provides for a method of manufacturing a memory cell which prevents the formation of poly stringers resulting from an ONO fence. ONO fences ...
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Method of fabricating flash memory
Therefore, the invention provides method of fabricating a flash memory, which has a high integration density for memory cells arrangement without the requirement of a ...
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Vertical semiconductor device and method of manufacturing the same
In the light of the above problems, it is an object of the present invention to provide an accumulation type field-effect transistor which has a high withstand voltage ...
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High voltage semiconductor device capable of increasing a switching speed
OF THE INVENTION Embodiments of the present invention will now be described with reference to the accompanying drawings. (First Embodiment) FIG. 1 is a cross-sectional ...
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Method of making MOS transistor having improved oxynitride dielectric
In accordance with the invention, a silicon oxide dielectric is grown in a nitrous oxide (N.sub.2 O) environment and then nitrided in an anhydrous ammonia (NH.sub.3) ...
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Non-volatile memory structure including protection and structure for maintaining threshold stability
It has been discovered that the V.sub.ts instability is due to plasma induced charging damage on the dielectric layers of a nonvolatile memory device. Accordingly, in a ...
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Method of making dense vertical programmable read only memory cell structure
These and additional objects are accomplished by the various aspects of the present invention, wherein, briefly and generally, according to one aspect, EPROM and EEPROM ...
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Quantum Computing 
