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OF THE INVENTION The ink jet ink compositions of this invention are particularly suited for use in ...


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 Use of solids as antiblocking additives for marker liquids
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 Hot melt inks for continuous jet printing
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 Full color recording materials and a method of forming colored images

Details
Inventors: Shiba, Keisuke; Kawai, Kiyoshi; Okazaki, Masaki; Okino, Yoshiharu;
Assignee: Fuji Photo Film Co., Ltd. (Kanagawa, JP)
Primary Examiner: Schilling; Richard L.
Assistant Examiner: Neville; Thomas R.
Attorney, Agent or Firm: Sughrue, Mion, Zinn, Macpeak & Seas

A full color recording material which has, on a support, at least three silver halide photosensitive emulsion layers which have different color sensitivities and which contain a yellow coupler, magenta coupler and cyan coupler, respectively, and in which at least two of these layers are selectively spectrally sensitized to match semiconductor laser light beams of wavelengths greater than 670 nm, wherein said at least three silver halide photosensitive layers which have different color sensitivities each contains silver chlorobromide grains with a layer average silver chloride content of at least 96 mol %, and said silver chlorobromide grains have a silver bromide local phase of which the silver bromide content is higher than that of the surroundings and a method for forming color images wherein the recording material is imagewise exposed while being transported at a feed rate which matches the scanning rate with semiconductor light beams, and substantially continuously to the exposing, the material is subjected to a color development process wherein the time for color development using a color development solution is not more than 60 seconds, and the time for whole color development process including color development, breach-fixing, washing and/or stabilizing is not more than 180 seconds.

DETAILED DESCRIPTION OF THE INVENTION The light beam outputting mechanism used in this invention is described below.
Actual examples of the semiconductor lasers which can be used in the present invention include those in which materials such as In.
sub.
1-x Ga.
sub.
x P (up to 700 nm), GaAs.
sub.
1-x P.
sub.
x (610 to 900 nm), Ga.
sub.
1-x Al.
sub.
x As (690 to 900 nm), InGaAsP (1100 to 1670 nm) and AlGaAsSb (1250 to 1400 nm), for example, are used as the luminescence materials.
The light which is directed onto the full color photosensitive materials in the present invention may be the light which is emitted by the above mentioned semiconductor lasers or the light from a YAG laser in which an Nb:YAG crystal is excited by means of a GaAs.
sub.
x P(.
sub.
1-x) (1064 nm) light emitting diode.
The use of light selected from among the semiconductor laser light beams of wavelength about 670, 680, 750, 780, 810, 830 and 880 nm is preferred.
Furthermore, devices with which the wavelength of laser light is halved using a non-linear optical effect with a secondary higher harmonic wave generator element (SHG element), for example, those in which CD*A and KD*P are used as non-linear optical crystals, can be used in the present invention (See pages 122-139 of the Laser Society publication Laser Handbook, published Dec.
15, 1982).
Furthermore, LiNbO.
sub.
3 optical wave guide elements in which optical wave guides have been formed by replacing the Li.
sup.
+ ions in an LiNbO.
sub.
3 crystal with H.
sup.
+ ions can be used (Nikkei Electronics Jul.
14, 1986 (No.
399), pages 89-90).
When a laser beam has a wavelength of, for example, 670 nm, it hunts a wavelength region of from about 660 to 680 nm (providing that it thermally fluctuates).
Therefore, the sensitivity which is given to an emulsion should be in the region of from 660 to 680 nm in order to obtain stable sensitivity.
In the present invention "a laser beam having a wavelength of X nm" should be construed that the laser beam has a wavelength of a region including the wavelength of X nm which may be exist in the hunting region



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