Geometrical control of device corner threshold

DETAILED DESCRIPTION It is therefore an object of the present invention to provide a technique of adjustment of corner conduction in a field effect transistor which is independent of the channel conduction.
It is another object of the invention to provide a field effect transistor and a high-yield method for its manufacture in which the conduction threshold and off-current may be adjusted to desired values.
It is a further object of the invention to provide a field effect transistor and method of manufacture which allows the conduction/cut-off voltage to be adjusted at will.
It is yet another object of the invention to provide a transistor structure which is scalable to sub-micron sizes while maintaining a well-defined conduction/cut-off threshold voltage and conduction characteristic.
In order to accomplish these and other objects of the invention, a field effect transistor and integrated circuit including the same are provided having a conduction channel formed in an active area bounded by trench structures, a gate oxide and a gate electrode formed on the conduction channel, and a portion of the gate oxide and gate electrode extending along a portion of a side of the conduction channel at an interface of the conduction channel and the trench structures.
In accordance with another aspect of the invention, a method of manufacturing a semiconductor device including a field effect transistor is provided comprising the steps of forming a sacrificial oxide at a surface of an active area of a substrate and at an interface between the active area and a trench structure, removing the sacrificial oxide to form a recess in the substrate, and forming a gate oxide and a gate electrode over the active area and in the recess.