Cryogenic infrared laser in deuterium |
| In accordance with this invention, an infrared laser in deuterium is provided that lases in the 4 .... |
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Method of bonding two parts together and article produced thereby |
| OF THE INVENTION Referring to FIG. 1, there is shown one form of an article, generally designated ... |
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Semiconductor device |
| It is, therefore, an object of the present invention to eliminate the above-described problems. It ... |
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Overdrive control of FET power amplifier |
| I claim: 1. In combination: a FET power amplifier including a gate electrode; an overdrive control ... |
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Magnetic display panels |
| OF THE PREFERRED EMBODIMENTS Referring now to the drawing by numerals of reference and first to FIG... |
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Method of making compensated collinear reading or writing bar arrays assembled from subunits |
| An object of the present invention is to provide a large array fabrication process that will permit ... |
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Dielectric barrier material |
| The present invention comprises a method of fabricating an integrated circuit. A substrate ... |
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Method of joining beam leads with projections to device electrodes |
| It is, accordingly, a primary object of this invention to provide a method of manufacturing a ... |
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Semiconductor device and process for producing the same, and tape carrier used in said process |
| For the recent semiconductor devices, the higher reliability is required. To this end, the aging is ... |
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Halide-free process for the synthesis of ETS-10
| Details |
Inventors: Blosser, Patrick W.; Kuznicki, Steven M.;
Assignee: Engelhard Corporation (Iselin, NJ)
Primary Examiner: Bell; Mark L.
Assistant Examiner: Samae; David
Attorney, Agent or Firm:
A novel process for the preparation of a crystalline titanium molecular sieve zeolite identified as ETS-10 characterized by crystals of uniform morphology which is free from halide-containing reactants is disclosed. |
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DETAILED DESCRIPTION OF THE INVENTION The present invention is directed towards crystalline titanium molecular sieve zeolites which have a pore size of approximately 8 Angstrom units and have a titania-to-silica mole ratio in the range of from 2. 5 to 25. ETS-10 molecular sieves are disclosed and claimed in U. S. Pat. No. 4,853,202, the entire disclosure of which is incorporated herein by reference, and have a crystalline structure and an X-ray powder diffraction pattern having the following significant lines:
TABLE 1
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XRD Powder Pattern of ETS-10 (0-40. degree. theta)
Significant d-Spacing (Angs. )
I/I. sub. o
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14. 7 . +-. . 35 W-M
7. 20 . +-. . 15 W-M
4. 41 . +-. . 10 W-M
3. 60 . +-. . 05 VS
3. 28 . +-. . 05 W-M
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In the above table: VS=60-100 S=40-60 M=20-40 W=5-20 The above values were determined by standard techniques. The radiation was the K-alpha doublet of copper, and a scintillation counter spectrometer was used. The peak heights, I, and the positions as a function of 2 times theta, where theta is the Bragg angle, were read from the spectrometer chart. From these, the relative intensities, 100 I/I. sub. o, where I. sub. o is the intensity of the strongest line or peak, and d (obs. ), the interplanar spacing in A, corresponding to the recorded lines, were calculated. It should be understood that this X-ray diffraction pattern is characteristic of all the species of ETS compositions. Ion exchange of the sodium ions and potassium ions with cations reveals substantially the same pattern with some minor shifts in interplanar spacing and variation in relative intensity. Other minor variations can occur depending on the silicon to titanium ratio of the particular sample, as well as if it had been subjected to thermal treatment. Various cation exchanged forms of ETS have been prepared and their X-ray powder diffraction patterns contain the most significant lines set forth in Table 1
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