Heating method of semiconductor wafer

DETAILED DESCRIPTION With the foregoing in view, the present invention has as its object the provision of a heating method of a semiconductor wafer which method permits to achieve a selective heating of a wafer region to be heated and avoids any overheating of another wafer region requiring no heating.
In one aspect of this invention, there is thus provided a method for heating a semiconductor wafer having a first region to be heated and a second region requiring no heating, which method comprises forming a film over at least one of the first and second regions so as to make the reflectivity of the surface of the first region smaller than the reflectivity of the surface of the second region, and then exposing the semiconductor wafer to a flash of light to heat same.
The above heating method permits selectively heating the region to be heated and, at the same time, avoiding any overheating of the region requiring no heating.
The above and other objects, features and advantages of the present invention will become apparent from the following description and the appended claims, taken in conjunction with the accompanying drawings.