 Electrically erasable programmable logic device |
| The preferred embodiment in accordance with the present invention will be discussed in detail with ... |
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| Short channel IGBT with improved forward voltage drop and improved switching power loss |
| OF THE DRAWINGS Referring first to FIGS. 1 and 2, there is shown a portion of the active area of a ... |
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| Semiconductor non-volatile memory device having a NAND cell structure |
| In light of the above, therefore, it is an object of the invention to provide an improved non-... |
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| Light-emitting diode matrix with semi-insulating zones |
| What is claimed is: 1. A matrix of light-emitting diodes connected by conducting contacts and ... |
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| Solid state light source for emitting light over a broad spectral band |
| According to the invention, there is provided a solid state light source for generating light in ... |
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| Detecting lateral position of webs |
| I claim: 1. Apparatus for measuring the lateral position of a web as the web is fed along a ... |
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| Web guide apparatus |
| OF THE PREFERRED EMBODIMENT Referring to FIG. 1 there is shown a diagrammatic illustration of a ... |
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| Storage stable paper size composition containing ethoxylated lanolin |
| OF THE PREFERRED EMBODIMENTS The sizing compounds contemplated for use herein are the cyclic ... |
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| Nanoscale modulation doping method |
| In accordance with the present invention, a nanoscale modulation doping method combines a focused ... |
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High dielectric TiO.sub.2 -SiN composite films for memory applications
| Details |
Inventors: Bronner, Gary Bela; Cohen, Stephan Alan; Dobuzinsky, David Mark; Gambino, Jeffrey Peter; Ho, Herbert Lei; Madden, Karen Popek;
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Examiner: King; Roy V.
Assistant Examiner:
Attorney, Agent or Firm: Scully, Scott, Murphy & Presser, Neff; Daryl K.
A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 interdiffused into a Si.sub.3 N.sub.4 film is provided. |
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DETAILED DESCRIPTION One object of the present invention is to provide a method for fabricating a high dielectric composite structure for use in advanced memory applications.
Another object of the present invention is to provide a method of fabricating a new storage dielectric material which has a high dielectric constant while maintaining the robust qualities of Si.
sub.
3 N.
sub.
4.
These as well as other objects are achieved by the method of the present invention which comprises, in one embodiment, the steps of: (a) depositing a Si.
sub.
3 N.
sub.
4 layer on top of a semiconductor substrate; (b) forming a metal layer on said Si.
sub.
3 N.
sub.
4 layer; (c) annealing the composite formed in step (b) under conditions sufficient to form a metal silicide layer interdiffused into said Si.
sub.
3 N.
sub.
4 layer; and (d) oxidizing the composite produced in step (c) under conditions sufficient to convert the metal silicide interdiffusion layer to a layer containing a metal oxide.
In accordance with this embodiment of the present invention, the annealing step should be conducted in nonoxidizing ambients such as He, Ne, Ar, Xe, N.
sub.
2, H.
sub.
2 and the like thereof.
In an optional embodiment of the present invention, an annealing step followed by an in-situ oxidation step may be conducted prior to oxidizing the composite product.
In another embodiment of the present invention, a metal-nitride cap is provided on the metal layer prior to conducting the annealing step or during the annealing step if a N.
sub.
2 ambient is used.
The metal-nitride cap is removed prior to conducting said oxidizing step.
In accordance with this embodiment of the present invention, the annealing step may be conducted in a wide variety of ambients.
The metals employed in the present invention are those metals which are known in the art as being capable of providing a metal oxide that has a dielectric constant of from about 10 to about 600.
Suitable metals that can be employed in the present invention include, but are not limited to, Ti, Ta, Ba, Sr, Zr, Hf, Nb, V, Pb and Cr
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Quantum Computing 
