Integrated capacitor and method of fabricating same

DETAILED DESCRIPTION It is, therefore, an object of the present invention to provide a method of fabricating an integrated capacitor having an extremely thin dielectric or insulating layer.
A further object of the present invention is to provide a method of fabricating an integrated capacitor in which the growth rate of the oxide serving as the insulating layer can be accurately controlled.
A still further object of the present invention is to provide a method of fabricating an integrated capacitor having an insulating layer of less than 500 .
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Another object of the present invention is to provide a method of fabricating a semiconductor device including an integrated capacitor in which an oxide layer of less than 500 .
ANG.
serves as the gate oxide layer in a field effect transistor and as the dielectric in the integrated capacitor.
Another object of the present invention is to provide a method of fabricating an integrated capacitor having a thin insulating layer which can be combined with the process of fabricating silicon-gate CMOS semiconductor devices.
Another object of the present invention is to provide an integrated capacitor having an insulating layer having a thickness of less than 500 .
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Another object of the present invention is to provide an integrated capacitor requiring less area in a semiconductor device.
The present invention is directed to a method of fabricating an integrated capacitor including a diffused bottom plate and an insulating layer having a thickness of less than 500 .
ANG.
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In accordance with the method of the present invention the fabrication of an integrated capacitor having a thin insulating layer includes the steps of forming an oxide layer on a semiconductor substrate, providing through the oxide layer a first capacitor plate in a selected portion of the substrate, and forming a second capacitor plate on the portion of the oxide layer corresponding to the selected portion of the substrate.
Since the oxide layer is formed on an undoped or lightly doped substrate, an extremely thin oxide layer having a uniform thickness can be formed with good reproducibility