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Liquid-crystal light valve in combination with a cathode ray tube containing a far-red emitting phosphor
In accordance with the invention, LiAlO.sub.2 and LiGaO.sub.2 doped with Fe are phosphors which exhibit faster decay and increased light output under cathode ray ...
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Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
It is hence, in the light of the above background, an object of the invention to present a material applicable to a photo semiconductor device from blue to short ...
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Blue light-emitting device
An object of the present invention is to provide a blue light emitting device capable of adjusting wavelength freely without reducing intensity of the light to be ...
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Low-strain laser structures with group III nitride active layers
The present invention is a laser diode structure which is grown on a lattice mismatched silicon carbide substrate. As used herein, the term "lattice mismatched" means ...
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Vertical cavity surface emitting lasers with consistent slope efficiencies
There is therefore provided in a presently preferred embodiment of the present invention a VCSEL having a variable tuning layer for predictably adjusting the optical ...
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Method for changing the length of a coherent jet
The above and other objects, which will become apparent to those skilled in the art upon a reading of this disclosure, are attained by the present invention which is: A ...
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Semiconductor device having a solid-state image sensor
An object of the present invention is to provide a semiconductor device having a solid-state image sensor with reduced leakage current. According to the present ...
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Intraband quantum well photodetector and associated method
We claim: 1. A photodetector comprising multiple layers of semiconductor material including: an emitter layer; a collector layer; a quantum well layer disposed between ...
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Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
What is claim is: 1. A method for producing gallium nitride group compound semiconductor, comprising the steps of: forming a polycrystalline nitride layer containing ...
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Semiconductor laser including ridge confining buffer layer
An object of the present invention is to provide a method for producing a semiconductor device in which a ridge in a reverse mesa shape is formed by removing portions of ...
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