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Light-responsive-heterojunction-semiconductor-pn-element

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Light responsive heterojunction semiconductor pn element

Details

Inventors: Ogasawara, Nobuyoshi; Mitsui, Kotaro;
Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP)
Primary Examiner: Mintel; William
Assistant Examiner:
Attorney, Agent or Firm: Leydig, Voit & Mayer

A light responsive semiconductor includes a second conductivity type semiconductor substrate, a photoelectric conversion layer comprising semiconductor layers having a pn junction, which is disposed on the second conductivity type semiconductor substrate, a buffer layer comprising a second conductivity type semiconductor layer having a larger energy band gap than that of the photoelectric conversion layer. The element further includes a light reflection layer comprising a semiconductor layer which is disposed between the second conductivity type semiconductor substrate and the buffer layer. Alternatively, a light reflection layer which is a buffer layer is disposed between a photoelectric conversion layer and a semiconductor substrate.

DETAILED DESCRIPTION It is an object of the present invention to provide a light generation element having a high initial efficiency and superior radiation resistance.
Other objects and advantages of the present invention will become apparent from the detailed description given hereinafter; it should be understood, however, that the detailed description and specific embodiment are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.
According to the present invention, a light reflection layer is disposed between a buffer layer a semiconductor substrate, or a light reflection layer which functions as a buffer layer is disposed between a photoelectric conversion layer and a semiconductor substrate.
Accordingly, even if the diffusion length of charge carriers is reduced due to irradiation, the ability to collect charge carriers and the quantity of light absorption at the photoelectric conversion layer are not attenuated.
This results in superior radiation resistance and superior initial efficiency.

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