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MOS capacitor for improving electrostatic durability by using of a transistor
| Details |
Inventors: Lee, Ho-Jin;
Assignee: Samsung Electronics Co., Ltd. (Suwon, KR)
Primary Examiner: Kincaid; Kristine L.
Assistant Examiner: Dinkins; Anthony
Attorney, Agent or Firm: Jones & Volentine, L.L.P.
The present invention relates to a MOS capacitor. According to this invention, the MOS capacitor has a transistor structure. One electrode of the capacitor is connected to an emitter of the transistor and the other electrode of the capacitor is connected to a collector of the transistor. When the MOS capacitor is biased by static electricity the electrostatic durability is improved, since an electrostatic discharge path is formed by breakdown of a collector and an emitter. |
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DETAILED DESCRIPTION An object of the present invention is to improve electrostatic durability by forming an electrostatic discharge path.
In order to achieve this object, a MOS capacitor according to the present invention comprises a first region of a first conductive type formed in a semiconductor layer, a second region of a second conductive type formed in the semiconductor layer, and a third region of the first conductive type formed in the second region, wherein the first and the third regions are electrically connected to each other and the second region is left unconnected.
As another example, a MOS capacitor according to the present invention comprises a first diffusion region of a first conductive type formed in a semiconductor layer, a second diffusion region of a second conductive type, formed in the semiconductor layer and disconnected from the first diffusion region, a third diffusion region of a first conductive type formed in the second diffusion region, a first polysilicon layer formed over the first diffusion region, a second polysilicon layer formed over the third diffusion region and separated from the first polysilicon layer, a first metal electrode and a second metal electrode respectively formed on the first polysilicon layer and the second polysilicon layer, the first and second metal electrodes being disconnected from each other, an insulating layer formed over the first polysilicon layer, and a third metal electrode, formed over the insulating layer, disconnected from the first metal electrode and electrically connected to the second metal electrode.
As the other example, a MOS capacitor according to the present invention comprises a first diffusion region of a first conductive type formed in a semiconductor layer, a second diffusion region of a second conductive type formed in the semiconductor layer and disconnected from the first diffusion region, a third diffusion region of the first conductive type formed in the second diffusion region, an oxide layer formed over the first diffusion layer, a first electrode and a second electrode which are respectively formed on the first diffusion region and the third diffusion region and which are disconnected from each other, and a third electrode which is formed on the oxide layer formed on the first diffusion region and which is disconnected from the first electrode and electrically connected to the second electrode
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Quantum Computing 
