 Photopolymerization co-initiator systems |
| What is claimed is: 1. A photopolymerization co-initiator system which consists essentially of (a) ... |
|
| Photosensitive resin composition containing pullulan or esters thereof |
| What is claimed is: 1. A photosensitive resin composition comprising 30 to 90 parts by weight of at ... |
|
| Acyl benzyl ethers |
| What is claimed is: 1. A compound of the formula ##SPC4## where R.sub.1 and R.sub.2 each ... |
|
| Photographic supports and elements utilizing photobleachable omicron-nitroarylidene dyes |
| I claim: 1. A process for preparing a photographic image which comprises imagewise exposing to ... |
|
| Photo-imaging utilizing alkali-activated photopolymerizable compositions |
| What is claimed is: 1. The method of forming a polymeric image which comprises: a. providing photo-... |
|
| Stabilization of photosensitive recording material |
| We claim: 1. A recording process including image stabilization comprising the steps of: 1. image-... |
|
| Photopolymerization using an alpha-aminoacetophenone |
| I claim as my invention: 1. In a process for the photopolymerization of a polymerizable monomer ... |
|
| Substituted (4-carboxyphenoxy) phenyl alkane compounds |
| We claim: 1. A compound of the formula: ##STR34## wherein R.sub.1 is a C.sub.1 to C.sub.7 alkyl ... |
|
| Method for desensitization of a color developer |
| OF THE INVENTION According to the process of this invention, drying at the time of desensitization ... |
|
|
Method for dry etching vias in integrated circuit layers
| Details |
Inventors: Elkind, Jerome L.; Smith, Patricia B.; Hutchins, Larry D.; Luttmer, Joseph D.; York, Rudy L.; England, Julie S.;
Assignee: Texas Instruments Incorporated (Dallas, TX)
Primary Examiner: Hearn; Brian E.
Assistant Examiner: Everhart; B.
Attorney, Agent or Firm: Grossman; Rene E., Sharp; Melvin
A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas which is excited in a diode plasma reactor (100) which has an RF power source (13) applied to one of two parallel electrodes. The etching occurs in selected areas in a photoresist pattern (44) residing over the ZnS or HgCdTe layer (42). Wet etching the layer (42) with a wet etchant (54) following the dry etching, improves the via (50) by making the walls (48) smoother, and allowing for expansion of the vias (50) to a dimension necessary for proper operation of a HgCdTe-based infrared detector. |
|
DETAILED DESCRIPTION OF THE DRAWINGS Referring to FIG.
1, a schematic representation of an etching apparatus according to the present invention is shown and is generally designated 100.
Apparatus 100 is more commonly known as a diode plasma reactor.
A reactor chamber or vessel for use with the present invention is preferably capable of maintaining an internal pressure between approximately 0.
01 to 10 torr and an internal wafer temperature of between approximately 15 degrees to 130 degrees centigrade.
An RF powered electrode 12 is connected to an RF power source 13, which can, for example, generate 150 watts at 13.
56 megahertz.
Vessel 10 further includes a ground or substrate electrode 16.
For the etching step of the invention, the distance between the electrode 12 and the electrode 16 should be maintained in a range of approximately 2 to 6 inches, and is preferably approximately 4 inches.
A plasma 17 is formed between electrodes 12 and 16 and is in contact with wafer 19 on which material such as a CdTe layer, HgCdTe layer or a ZnS layer has been deposited.
Subsequent disclosure will discern the distinctions between operating parameters when using the HgCdTe layer versus the ZnS layer formed on wafer.
An inlet 18 to vessel 14 introduces the gas etchant into chamber 10.
In the preferred embodiment, the gas etchant comprises hydrogen or a hydrocarbon, preferably methane or ethane.
This etchant originates from the active-gas source 20.
Additionally, an inert gas source 22 can be mixed with the re-active gas source 20 in accordance with the present invention.
Inert gas 22 can comprise helium, argon, neon, or a combination thereof.
Valves 24, 26, and 28 are operated to control the relative flows of the gases from sources 20 and 22.
Active gas source 20 is initially brought through valves 24 and 28 into a mixing chamber 30.
A separate amount of inert gas 22 is released through valve 26 into the mixing chamber 30.
As mixed, the gas etchant species proceeds through a valve 32 to chamber 14, where the gas is activated through excitation by radio frequency (RF) energy from source 13 to produce the plasma 17
|
|
Quantum Computing 
