Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor

DETAILED DESCRIPTION It is an object of the present invention to provide a method for fabricating a resistor in an on-chip temperature sensor that has an easily controllable cut off temperature.
It is an object of the present invention to provide a method for fabricating a resistor in an on-chip temperature sensor that has an easily controllable resistivity that allows exact temperature cut off s point to be defined in a temperature controller.
It is an object of the present invention to provide a method for fabricating a resistor in a on-chip temperature sensor that has a easily controllable cut off temperature which is low cost and simple to manufacture.
It is an object of the present invention to provide a method for fabricating a resistor with both P and N type implanted impurities in a on-chip temperature sensor that has a easily controllable cut off temperature.
To accomplish the above objectives, the present invention provides a method of manufacturing an on-chip temperature controller including the steps of: forming a first insulation layer 20 over a semiconductor structure 10.
Next, we form a polysilicon layer 30 on the first insulation layer 20.
The polysilicon layer 30 is patterning to form a first poly-load resistor and a second poly-load resistor.
The first and the second poly-load resistors are connected to a temperature sensor circuit 12.
Both p-type and n-type impurity ions are implanted into the polysilicon layer 30.
An insulating (e.
g.
, interlevel dielectric (ILD)) dielectric layer 40 is formed over the polysilicon layer 30 and the first insulating layer 20.
The polysilicon layer is rapid thermal anneal the polysilicon layer at a Temperature in a range of between about 900 and 1100.
degree.
C.
for a time in a range of between about 10 and 20 seconds.
The polysilicon layer 30 preferably has a n-type impurity ion concentration in a range of between about 1E18 and 1E19 atoms/cm.
sup.
3 and a p-type impurity ion concentration in a range of between about 5E17 and 5E18 atoms/cm