Method of bonding silicon wafers at temperatures below 500 degrees centigrade for sensor applications

DETAILED DESCRIPTION In general, the invention includes a process for silicon wafer-to-wafer bonding at temperatures lower than 500.
degree.
C.
The process includes the steps of (1) treating the cleaned surfaces to make them smooth and hydrophilic, (2) initiating the bond by making intimate contact between wafers and (3) enhancing the bond strength at elevated temperatures below 500.
degree.
C.
This bonding process can be applied to sensor packaging.
These and other objects, features and advantages of the instant application will become apparent from the following brief description of the drawings, detailed description and appended claims and drawings.