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 Method of fabricating a high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory

Details
Inventors: He, Yue-Song; Ibok, Effiong;
Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA)
Primary Examiner: Booth; Richard
Assistant Examiner:
Attorney, Agent or Firm: Fliesler, Dubb, Meyer & Lovejoy

A method of fabricating an interpolysilicon dielectric structure in a non-volatile memory includes the steps of forming a nitride layer 12 on a floating gate 10 and a high dielectric constant layer 14 on the nitride layer 12. A control gate 18 may be formed directly on the high dielectric constant layer 14, or on a thin layer 16 of an oxide or an oxynitride on the high dielectric constant layer 14.

DETAILED DESCRIPTION What is claimed is: 1.
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (A) providing a first polysilicon layer; (B) forming a nitride layer on the first polysilicon layer; (C) forming a high dielectric constant layer on the nitride layer; and (D) forming a nitrogen-rich oxide layer on the high dielectric constant layer.
2.
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (I) providing a floating gate; (II) depositing a nitride layer on the floating gate; (III) forming a high dielectric constant layer on the nitride layer; and (IV) forming a nitrogen-rich oxide layer on the high dielectric constant layer.
3.
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (I) providing a floating gate; (II) nitridizing the floating gate to form a nitride layer on the floating gate; (III) forming a high dielectric constant layer on the nitride layer; and (IV) forming a nitrogen-rich oxide layer on the high dielectric constant layer.
4.
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (I) providing a floating gate; (II) depositing a first oxynitride layer on the floating gate; (III) forming a high dielectric constant layer on the first oxynitride layer; and (IV) forming a nitrogen-rich oxide layer on the high dielectric constant layer.
5.
A method of fabricating a dielectric structure in a non-volatile memory that includes a substrate, a tunnel oxide on the substrate and a floating gate on the tunnel oxide, comprising the steps of: (I) forming a nitride layer on the floating gate; (II) forming a high dielectric constant layer on the nitride layer; (III) forming a nitrogen rich oxide layer on the high dielectric constant layer; and (IV) forming a control gate on the nitrogen rich oxide layer.
6.
The method of claim 1, wherein the step of providing the first polysilicon layer comprises the step of providing a floating gate


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