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Method of improving pad metal adhesion
| Details |
Inventors: Chen, Sheng-Hsiung; Yang, Fan Keng;
Assignee: Taiwan Semiconductor Manufacturing Company (Hsin-Chu, TW)
Primary Examiner: Nguyen; Ha Tran
Assistant Examiner:
Attorney, Agent or Firm: Saile; George O., Ackerman; Stephen B.
The present invention is a new and improved method for fabricating aluminum metal pad structures wherein a thin adhesion layer of aluminum is placed in between the underlying copper metal and the top tantalum nitride pad barrier layer providing improved adhesion to the pad metal stack structure. In summary, present invention teaches a method comprising of forming a copper underlayer, forming the key aluminum adhesion layer, forming the tantalum nitride barrier layer, and finally forming the aluminum pad. The problem of adhesion of metal pad to underlying layers, dielectrics, and polymers in is not unique to the manufacture of multi-layer electronic circuit chips and modules, but is encountered in other technologies involved in other types of electronic elements, e.g., the formation of capacitors or even other technologies entirely unrelated to the fabrication of electrical devices. However, since the problems of loss of adhesion are of substantial economic importance at present in the fabrication of multi-layer chips and modules, the present invention is directed to silicon chip technology and IC modules, but can be easily applied to other technologies using these metal pad materials, special (stack) structures. |
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DETAILED DESCRIPTION It is a general object of the present invention to provide a new and improved method for fabricating aluminum metal pad structures wherein a thin adhesion layer of aluminum is placed in between the underlying copper metal and the top tantalum nitride pad barrier layer providing improved adhesion to the pad metal stack structure.
In summary, present invention teaches a robust method comprising of forming a copper underlayer, forming a key aluminum adhesion layer, forming a tantalum nitride barrier layer, and finally forming the aluminum pad.
Provided by Prior Art is a semiconductor silicon substrate (or IC module) with the first level of metal copper wiring being defined, embedded in the first layer of insulator, typically silicon oxide SiO.
sub.
X.
The invention starts with these conventional layers being provided by Prior Art methods.
Also, provided by Prior Art methods, can be a metal "seed layer" and metal diffusion barrier layer beneath the metal copper wiring layers.
In addition, the first level metal is placed on an interlevel dielectric (ILD) insulating layer (or an interconnect line layer, or device contact region to P-N junctions), provided by Prior Art methods.
In addition, provided by Prior Art methods, is another insulator layer which is patterned and defined to provide for a contact via region to the underlying copper metallurgy.
In these Prior Art methods, the patterned and defined aluminum pad can be placed directly in contact with the underlying copper.
However, these methods have proven deleterious to the pad since aluminum reacts with the copper and is consumed and depleted by forming CuAl.
sub.
2.
In another Prior Art attempt to prevent the deleterious reaction between the top Al pad and bottom Cu, an intermediate metal barrier layer of tantalum nitride , TaN is deposited, patterned and defined.
However, this approach results in poor adhesion of the TaN layer to the underlying copper since there is a lack of chemical or alloying (solid state solution) reaction between the TaN layer and Cu
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Quantum Computing 
