Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts

DETAILED DESCRIPTION Briefly stated, the scope of the present invention encompasses a III-V complementary semiconductor device employing compatible ohmic contacts.
Specifically, a preferred embodiment includes an N-channel device including an N-device gate.
The N-channel device includes a first heterostructure insulating region beneath the N-device gate and a first heterostructure channel region beneath the first heterostructure insulating region.
Additionally, N-source and N-drain regions are disposed along sides of the N-device gate.
The N-source region and N-drain region extend to the first heterostructure channel region.
A first ohmic region comprising a first material which provides a substantially stable ohmic contact through the temperature range 500.
degree.
-600.
degree.
C.
contacts the N-source region, while a similar second ohmic region contacts the N-drain region.
Additionally, the discussed preferred embodiment includes a P-channel device which has a P-device gate.
The P-channel device includes a second heterostructure insulating region beneath the P-device gate and a second heterostructure channel region beneath the second heterostructure insulating region.
P-source and P-drain regions are disposed along opposing sides of the P-device gate.
The P-drain and P-source regions extend to the second heterostructure channel.
A third ohmic region comprising the first material contacts the P-source region, while a fourth ohmic region comprising the first material contacts the P-drain region.
Furthermore, the scope of the present invention encompasses a method for making a complementary heterostructure device.
A heterostructure channel region is formed.
A heterostructure insulator region is formed above the channel region.
N-device and P-device gates are formed above the heterostructure insulator region.
N-source and N-drain regions are formed along opposing sides of the N-device gate, extending to the channel region.
P-source and P-drain regions are formed along opposing sides of the P-device gate, extending to the channel region