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Method-of-making-planarized-self-aligned-bipolar-integrated-circuits

Curved lead configurations

In one embodiment of the invention, a microelectronic lead assembly for connecting first and second ...

Semiconductor connection components and methods with releasable lead support

The present invention addresses these needs. One aspect of the present invention provides a ...

Microelectronic assembly having slidable contacts and method for manufacturing the assembly

OF THE PREFERRED EMBODIMENTS This invention relates to a microelectronic assembly and a method for ...

Semiconductor unit and method for manufacturing the same

OF THE INVENTION Hereinafter, the invention is further explained by referring to the following ...

Enhancements in framed sheet processing

The present invention addresses these needs. One aspect of the present invention provides a framed ...

Method for mounting semiconductor device

The present invention has been accomplished in light of the foregoing circumstances. An object of ...

Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors

It is an object of the present invention to provide a method of obtaining impact ionization ...

Semiconductor laser device

What is claimed is: 1. In a semiconductor laser device, the combination of an active layer that ...

Optical fiber cable provided with stabilized waterblocking material

Referring now to FIGS. 1 and 2, there is shown a communications cable which may incorporate the ...

Geometrical control of device corner threshold

It is therefore an object of the present invention to provide a technique of adjustment of corner ...

Method of making planarized, self-aligned bipolar integrated circuits

Details

Inventors: Liu, Michael S.; Chen, Huang-Joung;
Assignee: Honeywell Inc. (Minneapolis, MN)
Primary Examiner: Hearn; Brian E.
Assistant Examiner: Thomas; Tom
Attorney, Agent or Firm: Bruns; Gregory A.

A method for making a bipolar integrated circuit structure in a semiconductor substrate. A layer of insulating material having an implantation opening is formed on the upper surface of the semiconductor substrate. A polysilicon layer is formed in the implantation opening. A doping material is implanted into the polysilicon-filled opening. The doping material is diffused into the substrate material from the polysilicon-filled opening.

DETAILED DESCRIPTION The present invention is a method of making a bipolar integrated circuit structure in a semiconductor substrate comprising the steps of forming an implantation opening in a layer of insulating material on the upper surface of the semiconductor substrate, forming a polysilicon layer in the opening formed in the insulating material layer, and implanting into the polysilicon-filled opening a doping material capable of diffusing into the substrate material below the polysilicon-filled opening.

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