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Integrated capacitor and method of fabricating same
It is, therefore, an object of the present invention to provide a method of fabricating an integrated capacitor having an extremely thin dielectric or insulating layer. A...
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MOS capacitor for improving electrostatic durability by using of a transistor
An object of the present invention is to improve electrostatic durability by forming an electrostatic discharge path. In order to achieve this object, a MOS capacitor ...
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Method for simultaneously forming capacitor plate and metal contact structures for a high density DRAM device
It is an object of this invention to create a DRAM device, comprised of a stacked capacitor, (STC), structure, and metal contact structures. It is another object of this ...
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Method of making a reverse self-aligned BIMOS transistor integrated circuit
What is claimed is: 1. The method of forming self-aligned field effect and bipolar transistors comprising: forming a heavily doped conductive layer of one conductivity ...
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Method for fabricating VDMOS transistor with improved breakdown characteristics
What is claimed is: 1. A method for fabricating vertical-current-flow field-effect transistors, comprising the steps of: (a.) providing a substrate which includes at ...
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Advanced titanium silicide process for very narrow polysilicon lines
It is an object of this invention to form a low resistance, titanium silicide layer, for use as a component for narrow, less than 0.20 micrometer width, polycide word ...
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Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor
It is an object of the present invention to provide a method for fabricating a resistor in an on-chip temperature sensor that has an easily controllable cut off ...
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Electrophoretic system and method for multidimensional analysis
Having thus described the invention, there is claimed as new and desired to be secured by Letters Patent: 1. An apparatus for conducting electrophoretic analysis, the ...
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Method for forming ultra fine deep dielectric isolation
In accordance with the present invention, a method is described for the formation of ultra fine grooves that can be filled with dielectric material which can then act as ...
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Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs
The following describes, in accordance with the present invention, a process for reactive ion etching of GaAs, InP and their derivative ternary and quartenary compounds,...
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Quantum Computing 
