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Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
| Details |
Inventors: Sakaki, Hiroyuki; Tanoue, Tomonori; Nojiri, Hidetoshi;
Assignee: Canon Kabushiki Kaisha (Tokyo, JP); Sakaki; Hiroyuki (Kanagawa, JP)
Primary Examiner:
Assistant Examiner:
Attorney, Agent or Firm:
In a semiconductor element using avalanche multiplication such as a light-receiving element or a microwave oscillating element, a semiconductor A and a semiconductor B which satisfy the following condition: X.sub.A <X.sub.B, X.sub.A +E.sub.gA <X.sub.B +E.sub.gB where X.sub.A is the electron affinity of the semiconductor A, E.sub.gA is the forbidden band width of the semiconductor A, X.sub.B is the electron affinity of the semiconductor B and E.sub.gB is the forbidden band width of the semiconductor B, are layered and an electric field is applied in parallelism to the layer, whereby an impact ionization coefficient rate is obtained by junction of the different kinds of semiconductors. At least one of the semiconductors A and B is composed of a mixed crystal comprising three or more elements, and the mole fraction of said one semiconductor is varied to thereby control the value of the impact ionization coefficient rate. |
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DETAILED DESCRIPTION It is an object of the present invention to provide a method of obtaining impact ionization coefficient rates by an artificially arranged substance structure, unlike the existing semiconductor substances having impact ionization coefficient rates.
It is another object of the present invention to provide a method of obtaining impact ionization coefficient rates which could not be obtained from the existing semiconductor substances.
It is still another object of the present invention to provide a method of obtaining impact ionization coefficient rates by the structure of an artificially arranged substance structure, unlike the existing semiconductor substances having impact ionization coefficient rates, and of controlling the value of the impact ionization coefficient rate.
It is yet still another object of the present invention to provide a method of obtaining impact ionization coefficient rates which could not be obtained from the existing semiconductor substances and of controlling the value of the impact ionization coefficient rate.
In one aspect of the present invention, a semiconductor A and a semiconductor B which are different from each other are layered one upon the other and are so arranged that when electrons and holes are flowed in parallelism to the layers, the electrons and holes are spatially separated and move chiefly in the layers of the different semiconductors, whereby an impact ionization coefficient rate is obtained even by the junction of the different kinds of semiconductors.
That is, by forming such alternate layers of the semiconductor A and semiconductor B which satisfy the following relation: X.
sub.
A <X.
sub.
B, X.
sub.
A +E.
sub.
gA <X.
sub.
B +E.
sub.
gB ( 1) where X.
sub.
A is the electron affinity of the semiconductor A, E.
sub.
gA is the forbidden band width of the semiconductor A, X.
sub.
B is the electron affinity of the semiconductor B and E.
sub.
gB is the forbidden band width of the smiconductor B, and by applying an electric field in parallelism to the layers, the above objects are achieved
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Quantum Computing 
