Methods of forming layers over substrates

DETAILED DESCRIPTION In one aspect, the invention pertains to a method of forming a layer of material on a substrate.
A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber.
The mixture comprises a precursor of a desired material within a supercritical fluid, and is initially provided in the chamber under first conditions at which the precursor is stable.
Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to second conditions under which the stability of the precursor is altered relative to the first conditions.
The precursor reacts under the second conditions to form the desired material, and at least some of the desired material forms a layer on the substrate.
A difference between the first conditions and the second conditions can be, for example, that the second conditions comprise a higher temperature than the first conditions.
In one aspect, the invention pertains to a method of forming at least one trenched isolation region.
A semiconductor substrate is provided within a reaction chamber, and the substrate has at least one trench extending therein.
A mixture is provided within the chamber, with the mixture comprising a precursor of an electrically insulative material dissolved within a supercritical fluid.
The precursor is reactive at or above a threshold temperature to form the electrically insulative material.
The mixture is initially provided within the reaction chamber at a temperature below the threshold temperature.
Subsequently, the temperature of the mixture is raised to a temperature at or above the threshold temperature to form the electrically insulative material within at least one trench.