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Methods of forming materials within openings, and method of forming isolation regions
| Details |
Inventors: Moore, John T.; Blalock, Guy T.;
Assignee: Micron Technology, Inc. (Boise, ID)
Primary Examiner: Utech; Benjamin L.
Assistant Examiner: Deo; Duy-Vu
Attorney, Agent or Firm: Wells, St. John, Roberts, Gregory & Matkin
In one aspect, the invention includes a method of forming a material within an opening, comprising: a) forming an etch-stop layer over a substrate, the etch-stop layer having an opening extending therethrough to expose a portion of the underlying substrate and comprising an upper corner at a periphery of the opening, the upper corner having a corner angle with a first degree of sharpness; b) reducing the sharpness of the corner angle to a second degree; c) after reducing the sharpness, forming a layer of material within the opening and over the etch-stop layer; and d) planarizing the material with a method selective for the material relative to the etch-stop layer to remove the material from over the etch-stop layer while leaving the material within the opening. |
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DETAILED DESCRIPTION In one aspect, the invention encompasses a method of forming a material within an opening.
An etch-stop layer is formed over a substrate.
The etch-stop layer has an opening extending therethrough to expose a portion of the underlying substrate and comprises an upper corner at a periphery of the opening.
The upper corner has a corner angle with a first degree of sharpness.
A portion of the upper corner is removed to reduce the sharpness of the corner angle to a second degree.
After the portion of the upper corner is removed, a layer of material is formed within the opening and over the etch-stop layer.
The material is planarized with a method selective for the material relative to the etch-stop layer to remove the material from over the etch-stop layer while leaving the material within the opening.
In another aspect, the invention encompasses a method of forming an isolation region.
A nitride-containing layer is formed over a semiconductor substrate.
An opening is formed to extend through the nitride-containing layer and into the underlying substrate.
The nitride-containing layer comprises an upper corner at a periphery of the opening.
The upper corner has a corner angle with a first degree of sharpness.
A portion of the upper corner is removed to reduce the sharpness of the corner angle to a second degree.
After the portion of the upper corner is removed, an insulative material is formed within the opening and over the nitride-containing layer.
The insulative material is planarized to remove the material from over the nitride-containing layer while leaving the material within the opening in the semiconductive substrate.
The material within the opening in the semiconductive substrate forms at least a portion of an isolation region.
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Quantum Computing 
