Multi-layer reflector for electroluminescent device

DETAILED DESCRIPTION A multi-layer reflector is utilized on at least one facet surface of a semiconductor electroluminescent device capable of optical radiation emission in the wavelength range of 0.
6 to 1.
3 micrometers.
The reflector includes a plurality of contiguous layers of alternating composition.
The contiguous layers are of silicon and a material selected from the group consisting of aluminum oxide, (Al.
sub.
2 O.
sub.
3), magnesium fluoride, (MgF.
sub.
2) and silicon dioxide, (SiO.
sub.
2).
The contiguous layer in contact with the facet surface is of the selected group of materials.
Each of the contiguous layers are approximately .
lambda.
/4n in thickness, where ".
lambda.
" is the free space wavelength of radiation emitted from the electroluminescent device, and "n" is the index of refraction of the layer .