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Ohmic-contact

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Ohmic contact

Details

Inventors: Hawrylo, Frank Zygmunt;
Assignee: RCA Corporation (New York, NY)
Primary Examiner: Ozaki; G.
Assistant Examiner:
Attorney, Agent or Firm: Bruestle; Glenn H., Calder; Daniel N., Cohen; Donald S.

A contact of an indium gallium arsenide alloy forms an ohmic contact with a body of n-type or p-type single crystal gallium arsenide of a resistivity of 1 ohm-cm or greater. The method for forming the contact utilizes a low temperature range. This low temperature range lessens the amount of surface disassociation and aids in the prevention of contamination of the body of gallium arsenide.

DETAILED DESCRIPTION An ohmic contact and a method of making an ohmic contact on a body of single crystalline gallium arsenide.
A solution is prepared in which gallium arsenide and a conductivity modifier are dissolved in indium so that the solution is saturated with gallium arsenide.
The solution is brought into contact with the body of gallium arsenide, and then cooled so that an indium gallium arsenide alloy is deposited on the body.

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