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 Plasma processing method for improving a package of a semiconductor device

Details
Inventors: Yamazaki, Shunpei; Tsuchiya, Mitsunori; Urata, Kazuo; Koyama, Itaru; Imatou, Shinji; Hayashi, Shigenori; Hirose, Naoki; Sasaki, Mari; Ishida, Noriya; Wada, Kouhei;
Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa, JP)
Primary Examiner: Chaudhuri; Olik
Assistant Examiner: Griffis; Andrew
Attorney, Agent or Firm: Sixbey, Friedman, Leedom & Ferguson

An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.

DETAILED DESCRIPTION An object of the present invention is to provide, with due consideration to the drawbacks of such conventional devices, an electronic device in which the decrease in reliability is prevented.
Another object of the present invention is to provide a reliable device wherein an electronic device such as a semiconductor device or the like is wirebonded and molding is applied over the entire body of the electronic device.
Another object of the present invention is to use a non-product gas (a gas which does not decompose to form a film of a solid reaction product) for the plasma process to provide a densified layer, so that the surface of the molding modified into the densified layer, or a densified layer is formed on the surface of the molding.
Another object of the present invention is to prevent the development of cracking and swelling by improving the adherence of the die to the molding or protective film which adhere to the die.
Another object of the present invention is to provide a molding process which is carried out on the entire body of the device which has been wirebonded, so that the molding operation provides a densified layer on the surface in order to prevent entry of moisture from external sources into this molding.
In the present invention, there is no protective film formation (final coating) at the wafer level to prevent deterioration caused by water permeating the molding, but instead after the molding process (molding process by an organic resin), this film is provided on the outside of the electronic parts, by a plasma process using inert gas such as argon or a fluorinated gas over the molding after the molding process, or by using silicon nitride, "Diamond-Like Carbon" (DLC, referred to as so because it is carbon with the same sp3 bond as a diamond)), or the like over the molding after the molding process.
These objects are achieved in the present invention by the provision of a densified layer after completion of the molding process, which prevents the permeation of moisture into the moldings



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