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Semiconductor device having multilayer interconnection structure and method of making the same
| Details |
Inventors: Fukiage, Noriaki;
Assignee: Tokyo Electron Limited (Tokyo, JP)
Primary Examiner: Vu; Hung
Assistant Examiner:
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
The object of the present invention is to provide a diffusion preventing film capable of inhibiting diffusion of Cu into an insulator film when Cu is used as a wiring material. This objective is attained by forming the diffusion preventing film from a crystalline WCN film. The WCN film, when subjected to X-ray diffraction, shows peaks at a first position between 36.degree. to 38.degree. and at a second position between 42.degree. to 44.degree.. The half-width of the peak at the first position is 3.2.degree. or less, and the half-width of the peak at the second position is 2.6.degree. or less. Since the WCN film has satisfactory coverage, it can form a thick barrier film in a concave with a high aspect ratio. |
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DETAILED DESCRIPTION The object of the present invention is to provide a semiconductor device with a copper diffusion preventing film having high barrier properties, and a method of making the semiconductor device.
To attain this objective, the present invention provides a semiconductor device, which includes: an insulator film formed on a substrate; a wiring layer of copper formed on the insulator film; and a copper diffusion preventing film, formed between the insulator film and the wiring film, that prevents copper diffusion from the wiring layer to the insulator film.
The copper diffusion preventing film is preferably a crystalline film, that, when subjected to X-ray diffraction, shows peaks at a first position at 36 degrees or more, but 38 degrees or less, and at a second position at 42 degrees or more, but 44 degrees or less.
The higher the crystallinity of the copper diffusion preventing film, the higher the barrier properties.
The crystallinity can be expressed as the half-width of the peak.
The copper diffusion preventing film preferably has a half-width of 3.
2 degrees or less for the peak at the first position at 36.
degree.
to 38.
degree.
, and preferably has a half-width of 2.
6 degrees or less for the peak at the second position at 42.
degree.
to 44.
degree.
.
The copper diffusion preventing film may be formed from a film containing tungsten and carbon.
The present invention also provides a method of making a semiconductor device, which includes the steps of converting a gas containing tungsten, carbon, nitrogen and hydrogen into a plasma, and forming a crystalline copper diffusion preventing film by means of the plasma, the copper diffusion preventing film containing tungsten, carbon and nitrogen, and, when subjected to X-ray diffraction, showing peaks at a first position at 36 degrees or more, but 38 degrees or less, and at a second position at 42 degrees or more, but 44 degrees or less in X-ray diffraction, wherein a process temperature during formation of the copper diffusion preventing film is 250
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