Semiconductor laser device

DETAILED DESCRIPTION What is claimed is: 1.
In a semiconductor laser device, the combination of an active layer that constitutes a laser-oscillating resonator, and an inner-striped channel formed on a substrate in the resonating direction, light from said active layer being absorbed at both edges of said striped channel, resulting in an optical waveguide within said active layer, wherein the composition ratio of the mixed crystal constituting the edges of said striped channel in the vicinity of at least one of the light-emitting facets is different from that of the mixed crystal constituting the edges of said striped channel inside of the light-emitting facets, so that the amount of light to be absorbed at both edges of said striped channel in the vicinity of at least one of the light-emitting facets is smaller than that to be absorbed at both edges of said striped channel inside of the light-emitting facets.
2.
An apparatus according to claim 1, wherein said mixed crystal constituting the edges of said striped channel in the vicinity of at least one of the light-emitting facets is GaAlAs and said mixed crystal constituting the edges of said striped channel inside of the light-emitting facets is GaAs.




Description:
BACKGROUND OF THE INVENTION 1.
Field of the invention: This invention relates to a semiconductor laser device that suppresses the generation of heat on at least one light-emitting facet.
2.
Description of the prior art: Conventional semiconductor laser devices are classified into two groups, one of which is of a gain guided-type and the other of which is of an index guided-type, based on the optical waveguiding mechanism.
The index guided semiconductor laser devices are more useful from the practical viewpoint, because of the stability of the transverse mode that is important in practical use.
A number of structures for index guided semiconductor laser devices have been developed.
Especially, inner stripe semiconductor laser devices with a channeled substrate have been put into practical use because of the ease of their manufacture and their high yield