Semiconductor scribing method

DETAILED DESCRIPTION The present invention contemplates the scribing and breaking of a semiconductor wafer into individual die by anodizing the silicon in regions corresponding to desired die boundaries.
The regions are selectively anodized, and the anodization is continued until the anodized silicon extends into the semiconductor wafer to a depth that allows easy breakage.
Any difficulty in breaking may be overcome by then removing the anodized silicon, leaving a plurality of moats forming a grid-like pattern on the wafer.
The anodized silicon is easily removed in hydrofluoric acid.
The anodizing procedure is performed at low temperatures for a short period of time and is therefore not detrimental to the semiconductor material.
Further, when anodized silicon isolation techniques are used as disclosed in copending U.
S.
Pat.
application, Ser.
No.
601,855 entitled "Method for Providing Electrical Isolating Material in Selected Regions of a Semiconductive Material and the Product Produced Thereby" assigned to the assignee of the present invention, the anodizing step for the formation of the scribing grid moats may be combined with an anodizing step performed during the isolation process.
The same is true when contact pads for semiconductor devices are formed by anodizing selected pad regions of semiconductor material to form raised surfaces over the selected pad regions in accordance with copending U.
S.
Pat.
application, Ser.
No.
601,856 entitled "Contact Pad for a Semiconductor Device" now abandoned.
It is a primary object of the present invention to provide a method of breaking a semiconductor wafer into a plurality of discrete semiconductor die.
It is a further object of the invention that the method employed for preparing the wafer for subsequent breaking results in a high yield and requires a minimum amount of additional equipment, a minimum additional expense and the least possible stress on the wafer and dies and any circuits or components formed thereon.
According to a broad aspect of the invention, there is provided a method of breaking a semiconductor material in accordance with a desired breakage pattern comprising: anodizing preselected regions of the semiconductor material; and stressing said semiconductor material until said semiconductor material breaks in said regions weakened by the step of anodizing