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Semiconductor integrated circuit device with a high tolerance against abnormally high input voltage |
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Electron beam enhanced surface modification for making highly resolved structures |
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Plasma processing method for improving a package of a semiconductor device |
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Method of electron beam exposure |
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Device for recognizing the impact site of a charge carrier beam on a target |
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Method for dry etching vias in integrated circuit layers |
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Process for forming a buried drain or collector region in monolithic semiconductor devices |
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Golf ball |
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Semiconductor unit and method for manufacturing the same
| Details |
Inventors: Ono, Masahiro; Bessho, Yoshihiro;
Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP)
Primary Examiner: Chaudhuri; Olik
Assistant Examiner: Chambliss; Alonzo
Attorney, Agent or Firm: Merchant & Gould P.C.
A semiconductor unit, in which a semiconductor device having protruding electrodes is mounted face down onto the terminal electrodes of a circuit board through a bonding layer made of at least two kinds of conductive adhesive, and a method for manufacturing the semiconductor unit. |
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DETAILED DESCRIPTION OF THE INVENTION Hereinafter, the invention is further explained by referring to the following embodiments. (First Embodiment) FIGS. 1(a), (b) and (c) are cross-sectional views showing the manufacturing method for a semiconductor unit of the first embodiment of the invention. As shown in these figures, two-step protruding electrodes (bumps) 7 made of Au are formed on an electrode pad 3 of a semiconductor device (IC chip) 6. On the other hand, input-output terminal electrodes 8 are formed on a circuit board 9. First of all, as shown in FIG. 1(a), a first conductive adhesive 4 made of conductive fillers containing at least two kinds of atoms--for example, AgPd conductive filler--is transferred onto protruding electrodes (bumps) 7 of face down semiconductor device (IC chip) 6. Then, as shown in FIG. 1(b), a second conductive adhesive 5 made of conductive fillers containing simple substance atoms--such as Ag conductive fillers--is transferred onto the protruding electrodes (bumps) 7, which is transferred with first conductive adhesive 4. As a result, a bonding layer composed of first conductive adhesive 4 and second conductive adhesive 5 is formed on protruding electrodes (bumps) 7. As shown in FIG. 1(c), second conductive adhesive 5 is then adhered onto input-output terminal electrodes 8 of circuit substrate 9, and semiconductor device (IC chip) 6 is mounted face down on a circuit board 9. Finally, gaps between the semiconductor device (IC chip) 6 and circuit board 9 and the sides of semiconductor device (IC chip) 6 are underfilled with a under-fill resin 2 (which has a pH of about 4) made of inorganic rigid fillers (for instance, silica) and organic resin (e. g. , epoxy-based resin). As a result, a semiconductor unit is provided. In the semiconductor unit mentioned above, the protruding electrodes (bumps) 7 of semiconductor device (IC chip) 6 and input-output terminal electrodes 8 of circuit board 9 are electrically connected through the bonding layer made of the two kinds of conductive adhesive (first and second conductive adhesives 4 and 5), so that the adhesive strength increases at the boundary between first conductive adhesive 4 and protruding electrodes (bumps) 7 of semiconductor device (IC chip) and at the boundary between second conductive adhesive 5 and input-output terminal electrodes 8 of circuit substrate 9
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