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Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
| Details |
Inventors: Hayashi, Shigeo; Okawa, Kazuhiro; Mitsuyu, Tsuneo;
Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP)
Primary Examiner: Mintel; William
Assistant Examiner:
Attorney, Agent or Firm: Fish & Richardson
Disclosed is a photo semiconductor material characterized in the blue to ultraviolet wavelength region. The semiconductor is firmed by lattice matching a sulfide-selenide manganese-zinc epitaxial mixed crystal film to the substrate. A blue laser diode is fabricated by forming a double hereto quantum well structure on a substrate by using sulfide-selenide manganese-zinc mixed crystal films as clad layers. A zinc molecular beam, a manganese molecular beam, a sulfur molecular beam, and a selenium molecular beam are simultaneously emitted onto a GaAs substrate in an ultrahigh vacuum, and a mixed crystal of Zn.sub.1-x Mn.sub.x S.sub.y Se.sub.1-y (0<x<1, 0<y<1) is obtained. In particular, the molecular beam pressure is adjusted so as to lattice matched to the substrate. As the material for the substrate, for example, GaAs and ZnSe may be used. Moreover, on an n-type GaAs single crystal substrate, a 2 .mu.m thick chlorine doped n-type Zn.sub.0.8 Mn.sub.0.2 S.sub.0.2 Se.sub.0.8 a layer, a 50 nanometer thick ZnSe active layer, and a 1 .mu.m thick nitrogen doped p-type Zn.sub.0.8 Mn.sub.0.2 S.sub.0.2 Se.sub.0.8 layer are formed. An Au electrode layer and an In electrode layer are formed at both sides of this structure, and an optical resonator by cleavage mirror is formed. This laser diode emits coherent light in the blue light spection at room temperature in the pulse current injection condition. |
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DETAILED DESCRIPTION It is hence, in the light of the above background, an object of the invention to present a material applicable to a photo semiconductor device from blue to short wavelength region, while maintaining an excellent crystallinity by lattice matching to a substrate.
Another object is to achieve a blue laser diode using a material having a large band offset for ZnSe or a mixed crystal of Zn.
sub.
1-z Cd.
sub.
z S.
sub.
w Se.
sub.
1-w (0<z<1, 0<w<1) by lattice matching to the substrate.
An object of the invention is to provide a sulfide-selenide manganese-zinc photo semiconductor, comprising a sulfide-selenide manganese-zinc epitaxial mixed crystal film, wherein zinc, manganese, sulfur and selenium are formed on a semiconductor substrate, and the epitaxial mixed crystal film is lattice matched to the substrate.
It is preferable in this invention that the substrate is GaAs single crystal or ZnSe single crystal.
Another object of the invention is to provide a laser diode, comprising a double hereto quantum well structure on a substrate, whose clad layers are mixed crystal layers of n-type and p-type Zn.
sub.
1-x Mn.
sub.
x S.
sub.
y Se.
sub.
1-y (0<x<1, 0<y<1) which is lattice matched to the substrate, and whose active layer between the n-type clad layer and p-type clad layer is ZnSe or mixed crystal of Zn.
sub.
1-z Cd.
sub.
z S.
sub.
w Se.
sub.
1-w (0<x<1, 0<y<1).
Electrical structure is pin structure including the substrate.
It is preferable in this invention that a compound selected from aluminum, gallium, indium, fluorine, chlorine, iodine, and bromine is doped as an n-type impurity of the mixed crystal of n-type Zn.
sub.
1-x Mn.
sub.
x S.
sub.
y Se.
sub.
1-y (0<x<1, 0<y<l), and a compound selected from nitrogen, phosphorus, arsenic, lithium, and sodium is doped as a p-type impurity of the mixed crystal of p-type Zn.
sub.
1-x Mn.
sub.
x S.
sub.
y Se.
sub.
1-y (O <x<1, O<y<1).
It is preferable in this invention that the quantum well structure is formed in a lattice matched state on the substrate or in a state not inducing lattice relaxation
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Quantum Computing 
