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Photochromic naphthopyrans
OF THE INVENTION In recent years, photochromic plastic materials, particularly plastic materials for optical applications, have been the subject of considerable ...
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UV-A, UV-B discrimination sensor
In summarizing the present invention, a first aspect of the present invention relates to a UV-A, UV-B discriminating sensor and which is characterized in the provision ...
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Thin film transistor
It is therefore an object of the present invention to provide a thin film transistor which is free from the above-mentioned defects of the prior art. According to the ...
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Semiconductor device for minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another
OF THE PREFERRED EMBODIMENTS This disclosure of the invention is submitted in furtherance of the constitutional purposes of the Patent Laws "to promote the progress of ...
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Electro-optical device constructed with thin film transistors
An object of the present invention is to overcome the six problems mentioned above by taking balance among them and to provide a more economical electro-optical device ...
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Contact structure of an interconnection layer for a semiconductor device and a multilayer interconnection SRAM
One object of the present invention is to provide an interconnection structure which enhances reliability of a multilayer interconnection structure including a contact ...
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Catalyst for the diminution of automobile exhaust gases
What is claimed is: 1. A process for producing a catalyst for the removal of carbon monoxide and hydrocarbons from automobile exhaust gases comprising the steps of: A. ...
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Slurry phase syngas process
I claim: 1. A process for converting carbon monoxide and hydrogen to hydrocarbons which comprises contacting the carbon monoxide and hydrogen at a temperature ranging ...
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Atomic scale electronic switch
I claim: 1. An electronic switch comprising: (a) a plurality of terminals permanently fixed with respect to each other and spaced apart less than 100A; (b) an atom ...
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Method of making planarized, self-aligned bipolar integrated circuits
The present invention is a method of making a bipolar integrated circuit structure in a semiconductor substrate comprising the steps of forming an implantation opening ...
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