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Plasma processing method for improving a package of a semiconductor device
An object of the present invention is to provide, with due consideration to the drawbacks of such conventional devices, an electronic device in which the decrease in ...
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Method of electron beam exposure
One object of this invention is to provide a method of electron beam exposure in which, when a resist film on a substrate is exposed with an electron beam, the ...
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Device for recognizing the impact site of a charge carrier beam on a target
The invention is therefore based on the task of obtaining an actual position signal of the impact point of an electron beam on a target which is independent of the melt ...
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Method for dry etching vias in integrated circuit layers
OF THE DRAWINGS Referring to FIG. 1, a schematic representation of an etching apparatus according to the present invention is shown and is generally designated 100. A...
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Process for forming a buried drain or collector region in monolithic semiconductor devices
The process in accordance with the invention aims at overcoming the above drawbacks. A first innovative process embodiment comprises the following steps: growing on a ...
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Golf ball
OF THE INVENTION The present invention is directed to improved core construction and several methods for improving core construction. Broadly, the golf ball core of the ...
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Optoelectronic switching and display device with porous silicon
It is a principal object of the present invention to overcome the above shortcomings by providing a solid state optoelectronic switching and display device for high ...
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Method of forming porous silicon
It is an object of the present invention to provide a process for manufacturing porous silicon having a high degree of uniformity. Another object of the invention is to ...
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Lightweight neutron detector
What is claimed is: 1. In a neutron detector including a metallic encasement containing a neutron detecting gas and further including a moderator material disposed on ...
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Method of forming a salicided self-aligned metal oxide semiconductor device using a disposable silicon nitride spacer
A method of fabricating a SALICIDED complementary metal oxide semiconductor utilizing a very thin oxide spacer and a disposable nitride layer is disclosed. The method of ...
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Quantum Computing 
