High speed optical inspection apparatus for a transparent disk using gaussian distribution analysis and method therefor
It is an object of this invention to provide a high-speed optical inspection apparatus and method suitable for production testing of transparent disks. It is another object of this invention to provid... Read More
Inventors: Brunfeld, Andrei; Shamir, Joseph; Toker, Gregory; Singher, Liviu; Laver, Ilan; Pekel, Ely;, Assignee: Brown & Sharpe Surface Inspection Systems, Inc. (North Kingstown, RI) |
Ohmic contact
An ohmic contact and a method of making an ohmic contact on a body of single crystalline gallium arsenide. A solution is prepared in which gallium arsenide and a conductivity modifier are dissolved in... Read More
Inventors: Hawrylo, Frank Zygmunt;, Assignee: RCA Corporation (New York, NY) |
Low resistivity ohmic contacts for compound semiconductor devices
OF THE DRAWING The drawing is a schematic cross section of an exemplary compound semiconductor device having an improved ohmic contact in accordance with the invention. The exemplary semiconductor de... Read More
Inventors: Thompson, James W.;, Assignee: Microwave Semiconductor Corp. (Somerset, NJ) |
Apparatus for compensating corrosion effects in integrated semiconductor circuits
I claim: 1. Apparatus for compensating corrosion effects due to highly mobile positive ions in insulating oxides of integrated semiconductor circuits, comprising a semiconductor circuit formed of an i... Read More
Inventors: Goetz, Jurgen R.;, Assignee: Siemens Aktiengesellschaft (Berlin and Munich, DE) |
Method for forming photovoltaic cells employing multinary semiconductor films
What is claimed is: 1. A method for use in the manufacture of photovoltaic cells having a film of a Cu-ternary semiconductor compound made up of a plurality of constituent elements, comprising the ste... Read More
Inventors: Love, Robert B.; Choudary, Uppala V.;, Assignee: Atlantic Richfield Company (Los Angeles, CA) |
Low phosphorus containing band-shaped and/or filamentary material
It is an object of the invention to eliminate the disadvantages associated with prior compositions, which have preferably been used as solderable materials. It is a further object to provide a band-sh... Read More
Inventors: Hiesbock, Heinz G.; Bartl, Karl;, Assignee: Karl Neumayer, Erzeugung und Vertrieb von Kabeln, Drahten isolierten (Gunselsdorf, AT) |
Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
The present invention provides a method of forming an irradiated region of a desired thickness, dosage and dosage gradient in a material such as semiconductor body a desired distance from a selected s... Read More
Inventors: Bartko, John; Schlegel, Earl S.;, Assignee: Westinghouse Electric Corp. (Pittsburgh, PA) |
Method of coating titanium and its alloys
We claim: 1. A process for improving the wear resistance of titanium and its alloys comprising the operations of coating a surface of a workpiece made of titanium or an alloy of titanium and which is ... Read More
Inventors: Dearnaley, Geoffrey; Watkins, Robert E. J.;, Assignee: United Kingdom Atomic Energy Authority (London, GB2) |
Process for the manufacture of continuous strip cast aluminum alloy suitable for can making
What is claimed is: 1. A process for fabricating aluminum alloy strip stock suitable for the manufacture of drawn and wall-ironed articles comprising continuously casting an aluminum alloy in strip fo... Read More
Inventors: Merchant, Harish D.; Morris, James G.; Scharf, Gunther;, Assignee: Continental Can Company (Stamford, CT) |
Method of improving pad metal adhesion
It is a general object of the present invention to provide a new and improved method for fabricating aluminum metal pad structures wherein a thin adhesion layer of aluminum is placed in between the un... Read More
Inventors: Chen, Sheng-Hsiung; Yang, Fan Keng;, Assignee: Taiwan Semiconductor Manufacturing Company (Hsin-Chu, TW) |
Light emitting device
It is therefore an object of the present invention to provide a high-reliability light emitting device by suppressing deterioration of an active layer resulting from diffusion of an introduced impurit... Read More
Inventors: Kawasumi, Takayuki;, Assignee: Sony Corporation (Tokyo, JP) |
Liquid-crystal light valve in combination with a cathode ray tube containing a far-red emitting phosphor
In accordance with the invention, LiAlO.sub.2 and LiGaO.sub.2 doped with Fe are phosphors which exhibit faster decay and increased light output under cathode ray excitation, compared with commercially... Read More
Inventors: Sluzky, Esther; Lemoine, Mary A.; Hesse, Kenneth R.;, Assignee: Hughes Aircraft Company (Los Angeles, CA) |
Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
It is hence, in the light of the above background, an object of the invention to present a material applicable to a photo semiconductor device from blue to short wavelength region, while maintaining a... Read More
Inventors: Hayashi, Shigeo; Okawa, Kazuhiro; Mitsuyu, Tsuneo;, Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP) |
Blue light-emitting device
An object of the present invention is to provide a blue light emitting device capable of adjusting wavelength freely without reducing intensity of the light to be generated. Another object of the pres... Read More
Inventors: Nitta, Koichi;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Low-strain laser structures with group III nitride active layers
The present invention is a laser diode structure which is grown on a lattice mismatched silicon carbide substrate. As used herein, the term "lattice mismatched" means that one or more layers of the l... Read More
Inventors: Edmond, John Adam; Bulman, Gary E.; Kong, Hua-Shuang;, Assignee: Cree Research, Inc. (Durham, NC) |
Vertical cavity surface emitting lasers with consistent slope efficiencies
There is therefore provided in a presently preferred embodiment of the present invention a VCSEL having a variable tuning layer for predictably adjusting the optical efficiency of the laser during fab... Read More
Inventors: Scott, Jeffrey W.;, Assignee: Cielo Communications, Inc. (Broomfield, CO) |
Method for changing the length of a coherent jet
The above and other objects, which will become apparent to those skilled in the art upon a reading of this disclosure, are attained by the present invention which is: A method for changing the length ... Read More
Inventors: Anderson, John Erling; Sarma, Balu; Mahoney, William John;, Assignee: Praxair Technology, Inc. (Danbury, CT) |
Semiconductor device having a solid-state image sensor
An object of the present invention is to provide a semiconductor device having a solid-state image sensor with reduced leakage current. According to the present invention, a semiconductor device inclu... Read More
Inventors: Maeda, Atsushi; Sakakibara, Kiyohiko;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Intraband quantum well photodetector and associated method
We claim: 1. A photodetector comprising multiple layers of semiconductor material including: an emitter layer; a collector layer; a quantum well layer disposed between said emitter layer and collector... Read More
Inventors: Coon, Darryl D.; Karunasiri, Runkiri P.; Liu, Hui C.;, Assignee: University of Pittsburgh of the Commonwealth System of Higher Education (Pittsburgh, PA) |
Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
What is claim is: 1. A method for producing gallium nitride group compound semiconductor, comprising the steps of: forming a polycrystalline nitride layer containing aluminum nitride in a first temper... Read More
Inventors: Ishibashi, Akihiko; Ban, Yuuzaburou; Takeisi, Hidemi; Uemura, Nobuyuki; Kume, Masahiro; Kidoguchi, Isao;, Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP) |
Semiconductor laser including ridge confining buffer layer
An object of the present invention is to provide a method for producing a semiconductor device in which a ridge in a reverse mesa shape is formed by removing portions of a first semiconductor epitaxia... Read More
Inventors: Kaneno, Nobuaki; Kizuki, Hirotaka; Hayafuji, Norio; Shiba, Tetsuo; Tada, Hitoshi;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Group-III nitride based light emitter
The inventive group-III nitride based light emitter such as light emitting diodes and laser diodes has a double heterostructure wherein a diffusion suppressive layer is formed between a p-type claddin... Read More
Inventors: Ohuchi, Youichiro; Okagawa, Hiroaki; Watabe, Shinichi; Tadatomo, Kazuyuki;, Assignee: Mitsubishi Cable Industries, Ltd. (JP) |
RF transition for an area array package
One aspect of the present invention is a substrate for an area array package having a plurality of signal wirings. Each wiring has a first contact adapted to be connected to a respective terminal of a... Read More
Inventors: Kinayman, Noyan; Ziegner, Bernard A.; Anderson, Richard; Lanteri, Jean-Pierre; Buber, M. Tekamul;, Assignee: MIA-com (Lowell, MA) |
Fuses and their manufacture
What is claimed is: 1. The method of making a fuse containing arc quenching material including the steps of (a) forming at least one end cap with open sealing means comprising one or more raised tabs ... Read More
Inventors: Howton, Kenneth D.; Stewart, Robert G.; Zeitler, Herman R.;, Assignee: Brush Fuses, Inc. (Des Plaines, IL) |
Symmetrically clamped fiber optic receiver
The design that is discussed herein takes advantage of the fact that most data bus protocols use data formats that restrict the maximum pulse length to two bit times or less. This usually means that a... Read More
Inventors: Muska, Willis M.;, Assignee: International Telephone and Telegraph Corporation (New York, NY) |
Microminiature optical assembly
For purposes of a specific illustrative example, emphasis herein will be directed to particular coupling assemblies made of silicon. Silicon assemblies exhibit advantageous thermal-conductivity prope... Read More
Inventors: Pimpinella, Richard J.; Segelken, John M.;, Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories (Murray Hill, NJ) |
Semiconductor diode laser having a stepped effective refractive index
We claim: 1. A semiconductor diode laser comprising a semiconductor body (30) having a semiconductor substrate (10) of a first conductivity type, on which are successively disposed at least a first cl... Read More
Inventors: Opschoor, Jan; Ambrosius, Hubertus P. M. M.;, Assignee: U.S. Philips Corp. (New York, NY) |
Electronic cooling
(1) New and Different Function I have discovered that electronic components are more advantageously cooled by submerging them in transformer oil, i.e., a liquid with high electrical resistance and des... Read More
Inventors: Rohner, Thomas G.;, Assignee: Submergible Oil Systems, Inc. (Midland, TX) |
Laminated capacitor of feed-through type
The present invention has been developed with a view to substantially solving the above described disadvantages and has for one object to provide an improved laminated capacitor of a feed-through type... Read More
Inventors: Sakamoto, Yukio;, Assignee: Murata Manufacturing Co., Ltd. (JP) |
Magneto-optic light deflector system
In the present invention a coherent, transmitted light, e.g., laser, beam is linearly polarized by a beam splitter, is circularly polarized and rotated by a quarter wave plane and is then focused upon... Read More
Inventors: Hewitt, Frederick G.;, Assignee: Sperry Corporation (New York, NY) |
Quantum Computing 
