Compound semiconductor device
An object of the present invention is to provide a compound semiconductor device having a high threshold voltage and large gain. The above-described object is achieved by a compound semiconductor devi... Read More
Inventors: Kikkawa, Toshihide;, Assignee: Fujitsu Limited (Kawasaki, JP) |
Semiconductor device and production method thereof
It is therefore an object of the present invention to provide a semiconductor device which can improve the operation reliability. Another object of the present invention is to provide a semiconductor ... Read More
Inventors: Hoshino, Akira;, Assignee: NEC Corporation (Tokyo, JP) |
Semiconductor interferometer
Having thus described my invention, what I claim as new and desire to secure by Letters Patent is: 1. A signal translating device comprising in combination a semiconductor crystal having a region of a... Read More
Inventors: Fowler, Alan B.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Semiconductor device with a split conduction channel
Accordingly, it is an object of the present invention to provide a semiconductor element which enables electric control of the phase of carriers in the semiconductor device having the heterojunction o... Read More
Inventors: Yoshimura, Toshiyuki; Takeda, Eiji; Matsuoka, Hideyuki; Igura, Yasuo;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Thin film transistor having an improved gate structure and gate coverage by the gate dielectric
The above and other objects which will become apparent from the specification as a whole, including the drawings, are obtained in accordance with the present invention by employing a two-conductor gat... Read More
Inventors: Kwasnick, Robert F.; Wei, Ching-Yeu;, Assignee: General Electric Company (Schenectady, NY) |
Gallium nitride compound semiconductor light-emitting device
OF THE INVENTION FIGS. 1A to 1D are sectional views showing a method of fabricating a gallium nitride compound semiconductor laser (light-emitting device) according to one embodiment of the present i... Read More
Inventors: Nunoue, Shinya; Yamamoto, Masahiro;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Growth of congruently melting gadolinium scandium gallium garnet
Turning now to the FIGURE, there is shown an illustrative solid state laser 10 comprising a solid active medium 12 dispoesd along the axis of a cavity resonator formed by a pair of separated, concave... Read More
Inventors: Brandle, Jr., Charles D.; Fratello, Vincent J.; Valentino, Alejandro J.;, Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories (Murray Hill, NJ) |
Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
The present invention uses free organic radicals, preferably aliphatic or alkyl radicals to transport the active dopant species in the vapor phase to the semiconductor being grown. These radicals are ... Read More
Inventors: Younger, Charles R.; Hess, Kenneth L.; Irvine, Stuart J. C.; Gertner, Edward R.; Johnston, Shawn L.;, Assignee: Rockwell International Corporation (Seal Beach, CA) |
Semiconductor optical element and a process for producing the same
The present invention was accomplished in order to eliminate the above-mentioned problems, and its object is to provide a semiconductor optical element in which a layer having a diffraction grating fu... Read More
Inventors: Tokuda, Yasunori; Fujiwara, Kenzo;, Assignee: Mitsubishi Denki Kabushiki Kaisha (JP) |
Non-single-crystal semiconductor light emitting device
It is therefore an object of the present invention to provide a novel non-single-crystal semiconductor light emitting device which is free from the abovesaid defects of the prior art. A non-single-cry... Read More
Inventors: Yamazaki, Shunpei;, Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa, JP) |
Semiconductor optical device
What is claimed is: 1. A semiconductor optical device comprising: a substrate; semiconductor layers formed on said substrate including a first semiconductor layer which has a first forbidden band ener... Read More
Inventors: Fukuzawa, Tadashi; Yamada, Eizaburo; Hiruma, Kenji; Matsumura, Hiroyoshi;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Process of making thin film high efficiency solar cells
It is a principal object of the present invention to overcome the above shortcomings by providing a process for the large-scale manufacture of low-cost thin film materials for high efficiency solar ce... Read More
Inventors: Little, Roger G.;, Assignee: Spire Corporation (Bedford, MA) |
Method for producing a spatially periodic semiconductor layer structure
What is claimed is: 1. In a method for producing, by a molecular beam epitaxy process, a spatially periodic semiconductor layer structure in the form of a superlattice composed of an alternating arran... Read More
Inventors: Herzog, Hans-Joest; Jorke, Helmut; Kibbel, Horst;, Assignee: Icentia Patent-Verwaltungs-GmbH (Frankfurt am Main, DE) |
Method of controlling the order-disorder state in a semiconductor device
FIG. 1 is a sectional view of an exemplary device according to the invention which can undergo an order-disorder transition. Depicted are substrate 1, first layer 3, strained superlattice 5, and seco... Read More
Inventors: Bean, John C.; Ourmazd, Abbas;, Assignee: AT&T Bell Laboratories (Murray Hill, NJ) |
Growing smooth epitaxial layers on misoriented substrates
In order to graphically depict the manner in which the invention is implemented, consider the specific example of a GaAs layer grown by LPE at 780.degree. C on a nominally (100) GaAs substrate. As me... Read More
Inventors: Rode, Daniel Leon;, Assignee: Bell Telephone Laboratories, Incorporated (Murray Hill, NJ) |
Radiation hard MOS devices and methods for the manufacture thereof
Accordingly, it is an object of the present invention to provide improved, radiation hard MOS devices. It is a further object of the present invention to provide a local oxidation of silicon process c... Read More
Inventors: Lund, Clarence A.; Sugino, Michael D.;, Assignee: Motorola Inc. (Schaumburg, IL) |
Method of treating microorganism cells containing tryptophanase or treated product thereof
What we claim is: 1. A method of selectively inhibiting pyruvic acid decomposition activity in Escherichia coli selected from the group consisting of Escherichia coli K-12 YK3002, Escherichia coli YK3... Read More
Inventors: Terasawa, Masato; Shimazu, Mitsunobu; Endo, Fuzio; Yukawa, Hideaki;, Assignee: Research Association for Utilization of Light Oil (Tokyo, JP) |
Color image forming apparatus
The object of the invention is to provide a color image forming apparatus which automatically determines available colors and optimal copying processes per page of an original by executing a prelimina... Read More
Inventors: Murahashi, Takashi; Sugano, Masashi; Maruyama, Hiroyuki; Yokobori, Jun;, Assignee: Konica Corporation (Tokyo, JP) |
Shaped Josephson junction qubits
FIG. 2a shows a structure 200 having a long annular Josephson junction 210. Josephson junction 210 is formed by an annular superconductor 211 separated from another annular superconductor 212 by a di... Read More
Inventors: Ustinov, Alexey V.; Walraff, Andreas; Koval, Yu;, Assignee: D-Wave Systems, Inc. (Vancouver, CA) |
Device for emitting electromagnetic radiation at a predetermined wavelength
A device for emitting electromagnetic radiation at a predetermined wavelength is disclosed, said device having a cavity comprising a first bulk region of one conductivity type and a second bulk region... Read More
Inventors: Hoof, Chris Van; De Neve, Hans; Borghs, Gustaaf;, Assignee: Interuniversitair Microelektronica Centrum (IMEC) (BE) |
Apparatus and method providing a balancing load to a laser differential drive circuit
The following summary of the invention is provided to facilitate an understanding of some of the innovative features unique to the present invention, and is not intended to be a full description. A fu... Read More
Inventors: Tatum, Jim; Guenter, James Kenneth;, Assignee: Honeywell International Inc. (Morristown, NJ) |
Optical power control device for semiconductor light emitting element
Accordingly, one object of this invention is to provide an optical power control device for a semiconductor light emitting element in which, even when writing power is outputted for a long time, the d... Read More
Inventors: Kakuta, Yoshiyuki;, Assignee: Pioneer Electronic Corporation (Tokyo, JP) |
Waveguide type optical device with thermal compensation layers
An object of the present invention is to provide a waveguide type optical device which can solve the aforementioned problems. The above object is accomplished in such a way that a film which has a coe... Read More
Inventors: Imoto, Katsuyuki; Sano, Hirohisa; Hira, Yasuo;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Semiconductor luminescent device having organic/inorganic junction
It is an object of the present invention to provide a luminescent device which can largely improve characteristics and lifetime by using an organic/inorganic junction structure. It is another object o... Read More
Inventors: Egusa, Syun;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Quantum-well logic using self-generated potentials
The present invention relates to electronic devices. It is generally recognized that conventional VLSI integrated technical technology will be prevented from further scaling by the time MOS devices ge... Read More
Inventors: Reed, Mark A.;, Assignee: Texas Instruments Incorp. (Dallas, TX) |
Polysilahydrocarbon lubricants
OF THE INVENTION We have discovered a novel class of synthetic lubricant base stock consisting of tetrasilahydrocarbons having the general structure R.sub.1 --Si--R--Si(R.sub.2 R.sub.3 R.sub.4)].sub.... Read More
Inventors: Paciorek, Kazimiera J. L.; Shih, Joseph G.; Randolph, Bruce B.; Snyder, Jr., Carl E.;, Assignee: Lubricating Specialties Company (Pico Rivera, CA) |
Semiconductor integrated circuit device
In view of the above described problem in the prior art, it is a major object of this invention to provide a TTL-IC device in which transmission delay time is reduced by minimizing the parasitic capac... Read More
Inventors: Koyama, Tsunehiro;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Semiconductor laser
It is an object of the present invention to provide a semiconductor laser that reduces the threshold current at which laser oscillation begins. Other objects and advantages of the present invention wi... Read More
Inventors: Kakimoto, Syoichi; Kadowaki, Tomoko; Aoyagi, Toshitaka; Takagi, Kazuhisa;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Method of forming contact plugs for planarized integrated circuits
It is a principal object of the present invention to provide a low-resistance, conductive plug for contact apertures used for integrated circuit interconnections. It is another object of the present i... Read More
Inventors: Sander, Craig S.; Swaminathan, Balaji;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Method for planarization of a semiconductor device prior to metallization
The invention may be incorporated in an integrated circuit formed on a semiconductor slice, in which electrical contact is necessary between an upper metallization layer and a lower conductive interco... Read More
Inventors: Welch, Michael T.; McMann, Ronald E.; Torreno, Jr., Manuel L.; Garcia, Jr., Evaristo; Brighton, Jeffrey E.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Quantum Computing 
