Photo-mask with regions having a differing optical transmissivities
It is an object of the invention to provide a photomask which can be easily and quickly manufactured without wet chemical steps. A further object of the invention is to provide a photomask which can b... Read More
Inventors: Kalbitzer, Siegfried;, Assignee: Max Planck-Gesellschaft zur Forderung der Wissenschaften e.V. (Gottingen, DE) |
Method of making thin film transistors
In view of the aforesaid aspects, it is an object of the present invention to provide a method of making thin film transistors in which when a thin film transistor is produced by forming a polycrystal... Read More
Inventors: Noguchi, Takashi;, Assignee: Sony Corporation (Tokyo, JP) |
Crystal growth method
The present invention is intended to solve the problems associated with the prior art examples described above. An object of the present invention is to provide a method for growth of crystal, which c... Read More
Inventors: Yonehara, Takao;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Method of forming thin-film single crystal for semiconductor
It is a first object of the present invention to provide a method of growing a thin-film semiconductor crystal through a simplified ion implantation process for an improved throughput. A second object... Read More
Inventors: Noguchi, Takashi;, Assignee: Sony Corporation (Tokyo, JP) |
Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
These and other objects are accomplished in accordance with the invention by depositing an unpatterned layer of amorphous silicon on an insulating layer over a surface of a semiconductor substrate. Th... Read More
Inventors: Sandow, Peter M.; Chin, Barry L.;, Assignee: Burroughs Corporation (Detroit, MI) |
Atomic force microscope having cantilever with piezoresistive deflection sensor
In summary, the present invention is a microminiature cantilever arm with a piezoresistive resistor at the fixed (base) end of the cantilever arm for use in imaging surface features of various objects... Read More
Inventors: Albrecht, Thomas; Tortonese, Marco; Barrett, Robert;, Assignee: Board of Trustees, Leland Stanford Jr. University (Palo Alto, CA) |
Method of manufacturing a perovskite thin film dielectric
An object of the present invention is to provide a method of manufacturing a semiconductor device comprising a capacitor insulating thin film made of a high dielectric constant compound having a diele... Read More
Inventors: Eguchi, Kazuhiro; Kiyotoshi, Masahiro; Imai, Keitaro;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Scanning surface microscope using a micro-balance device for holding a probe-tip
An object of the present invention is to provide a scanning surface microscope which can detect a weak interatomic force such as a Vander Waals' force, that is, a force as small as 10.sup.-12 N, to ob... Read More
Inventors: Hosoki, Shigeyuki; Hosaka, Sumio; Takata, Keiji;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Method of thinning a semiconductor wafer
It is therefore an object of the present invention to provide an improved method of forming semiconductor layers which are uniform in thickness. Another object of the invention resides in providing an... Read More
Inventors: Yagi, Atsuo; Matsushita, Takeshi; Hashimoto, Makoto;, Assignee: Sony Corporation (Tokyo, JP) |
Optically controlled surface-emitting lasers
Accordingly, an object of the invention is to provide an optically controlled surface-emitting laser. A further object of the invention is to provide a two-dimensional array of optically controller la... Read More
Inventors: Chan, Winston K.; Von Lehmen, Ann C.;, Assignee: Bell Communications Research, Inc. (Livingston, NJ) |
Compact optical semiconductor module capable of being readily assembled with a high precision
What is claimed is: 1. An optical semiconductor module, comprising: a substrate; an optical semiconductor chip which has a chip surface and which is mounted on said substrate; a plurality of first ele... Read More
Inventors: Tanisawa, Yasuhisa;, Assignee: NEC Corporation (Tokyo, JP) |
On-chip high voltage generator and regulator in an integrated circuit
A voltage multiplier constructed in accordance with our invention includes a novel MOS transistor capable of withstanding high voltages. We have discovered that the high voltage MOS transistor can be ... Read More
Inventors: Kazerounian, Reza; Ali, Syed; Eitan, Boaz;, Assignee: WaferScale Integration, Inc. (Fremont, CA) |
Compound semiconductor wafer
The present invention is intended to eliminate the above-mentioned disadvantages of the prior art. It is therefore an object of the present invention to provide a compound semiconductor wafer low in c... Read More
Inventors: Morimoto, Kiyoshi;, Assignee: Futaba Denshi Kogyo K.K. (Chiba, JP) |
Soldering an optical component to a substrate
The invention in accordance with one aspect is an optical assembly which includes a base member, a block of material soldered to the base member, the block including a centerline extending between fir... Read More
Inventors: Joyce, William Baxter; Wilt, Daniel Paul;, Assignee: Lucent Technologies Inc. (Murray Hill, NJ) |
Strained layer Fabry-Perot device
It is an object of this invention to extend the operation of the Asymmetric Fabry-Perot reflection modulator to cover any wavelength selected from the entire range between 0.87 .mu.m and 1.55 .mu.m av... Read More
Inventors: Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.;, Assignee: The United States of America as represented by the United States (Washington, DC) |
Semiconductor laser
It is an object of the present invention to provide a semiconductor laser of the 1 .mu.m band capable of realizing a high characteristic temperature. It is another object of the present invention to p... Read More
Inventors: Uchida, Toru; Anayama, Chikashi; Yamazaki, Susumu; Kurakake, Hirohide; Kuramata, Akito; Soda, Haruhisa;, Assignee: Fujitsu Limited (Kanagawa, JP) |
Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor
The present invention is directed to II-VI compound semiconductor light emitting devices which overcome the prior art problems associated with equilibrium grown crystals such as strain related defects... Read More
Inventors: Fan, Yongping; Han, Jung; Nurmikko, Arto V.; Gunshor, Robert L.; He, Li;, Assignee: Research Corporation Technologies, Inc. (Tucson, AZ) |
Gas generating system for chemical lasers
What is claimed is: 1. A method for preparing excited molecular oxygen in the excited singlet-delta electronic state for use as an energizing reactant for a chemical laser, the method of comprising th... Read More
Inventors: Clendening, Jr., Charles W.; English, William D.; Mach, Martin H.;, Assignee: TRW Inc. (Redondo Beach, CA) |
Method for reducing surface layer defects in semiconductor materials having a volatile species
OF THE INVENTION When a group-III nitride semiconductor material such as GaN is grown, nitrogen (N) atoms are typically lost during the process. During the cool-down cycle, N-atoms escaping from the ... Read More
Inventors: Nguyen, Chanh N.; Wilson, Robert G.;, Assignee: Hughes Electronics Corporation (El Segundo, CA) |
Flexible connector
OF THE INVENTION The present invention provides a connector that can accommodate high current, is not labor intensive to assemble and disassemble, and that allows a wide range of motion to accommodat... Read More
Inventors: Savage, Mark E.; Simpson, Walter W.;, Assignee: Sandia Corporation (Albuquerque, NM) |
Local interconnect method and structure
In accordance with the present invention, a method and structure involving interconnection of semiconductor devices are provided which substantially eliminate or reduce disadvantages and problems asso... Read More
Inventors: Moslehi, Mehrdad M.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Method of manufacturing tandem type thin film photoelectric conversion device
The present invention was made in order to solve the above described problems, and its object is to provide a method of manufacturing a tandem type thin film photoelectric conversion device capable of... Read More
Inventors: Yoshimi, Masashi; Okamoto, Yoshifumi;, Assignee: Kaneka Corporation (Osaka, JP) |
Semiconductor laser with coupled loss modulator for optical telecommunications
As shown in FIG. 1, a coupled laser structure 100 comprises first, second, and third semiconductor heterostructure sections 10, 20, and 30, respectively, to produce an output optical wave 50 in an op... Read More
Inventors: Gordon, Eugene I.;, Assignee: AT&T Bell Laboratories (Murray Hill, NJ) |
Apparatus for transmitting optical signals into a protected environment
OF THE PREFERRED EMBODIMENTS Referring to FIG. 1, a lightpipe in accordance with the invention is shown. The lightpipe 12 is rigid due to its relative thickness and cylindrical in shape. It comprises... Read More
Inventors: Pinoow, Douglas A.;, Assignee: Universal Photonix, Inc. (Laguna Hills, CA) |
Laser diode
It is an object of the present invention to provide a laser diode which radiates with a single wavelength, and a method for fabricating the same. Another object of the invention is to provide a DFB-LD... Read More
Inventors: Tsubota, Takashi; Hosoi, Yoji;, Assignee: Oki Electric Industry Co., Ltd. (JP) |
Hydrolysis-induced vapor deposition of oxide films
These and other objects of the invention are achieved by depositing a metal oxide thin film, typically under 100 nm thick, over a variety of substrates, particularly, over hydrophilic substrates durin... Read More
Inventors: Rothschild, Mordechai; Black, Jerry G.; Ehrlich, Daniel J.;, Assignee: Massachusetts Institute of Technology (Cambridge, MA) |
Gas laser with longitudinal flow
What is claimed is: 1. High-frequency excited gas laser with longitudinal flow, comprising a discharge channel having laser gas flowing therethrough in a direction of flow and high-frequency electrode... Read More
Inventors: Wildermuth, Eberhard; Von Buelow, Hartwig; Schock, Wolfram; Porath, Joerg; Schanz, Klaus;, Assignee: Deutsche Forschungsanstalt fuer Luft- und Raumfahrt e.V. (Bonn, DE); Rofin-Sinar Laser GmbH (Hamburg, DE) |
Hybrid laser for optical communications, and transmitter, system, and method
FIG. 1 shows substrate 11 supporting laser active layer 12, such substrate typically including a buffer layer. FIG. 1 further shows upper cladding layer 13, and contact layers 14 and 15 with soldered... Read More
Inventors: Blonder, Greg E.; Henry, Charles H.; Kazarinov, Rudolf F.; Olsson, Nils A.; Orlowsky, Kenneth J.;, Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories (Murray Hill, NJ) |
High power semiconductor laser
What is claimed is: 1. A semiconductor laser comprising: an elongated active gain medium layer; a relatively narrower mirror facet at one end of the gain layer; an output facet at the other end of the... Read More
Inventors: Ungar, Jeffrey E.;, Assignee: Ortel Corporation (Alhambra, CA) |
Laser amplifier
In semiconductor laser amplifiers it is generally found that it is difficult to have identical confinement factors for the orthogonal polarisations of input light, which propagate within the active re... Read More
Inventors: Marshall, Ian W.;, Assignee: British Telecommunications public limited company (London, GB2) |
Quantum Computing 
