Light-emitting diode matrix with semi-insulating zones
What is claimed is: 1. A matrix of light-emitting diodes connected by conducting contacts and comprising an active layer of a III-V semiconductor material of a first conductivity type, a surface-adjac... Read More
Inventors: Varon, Jacques J.; Mahieu, Marc;, Assignee: U.S. Philips Corporation (New York, NY) |
Solid state light source for emitting light over a broad spectral band
According to the invention, there is provided a solid state light source for generating light in the range of visible and infra-red radiation by the recombination of charge carriers comprising, a mono... Read More
Inventors: Ash, Richard M.; Carter, Andrew;, Assignee: Siemens Plessey Controls Limited (Dorset, GB2) |
Detecting lateral position of webs
I claim: 1. Apparatus for measuring the lateral position of a web as the web is fed along a predetermined path, comprising: a position-detecting means located at a margin of the said web path and incl... Read More
Inventors: Isherwood, Jeffrey;, Assignee: Crosfield Electronics Limited (GB) |
Web guide apparatus
OF THE PREFERRED EMBODIMENT Referring to FIG. 1 there is shown a diagrammatic illustration of a web guide system 20 in accordance with the present invention for use with a web printing press. The sys... Read More
Inventors: Gnuechtel, Herman C.; Kosmen, Stephen P.;, Assignee: Web Printing Controls Co., Inc. (Barrington, IL) |
Storage stable paper size composition containing ethoxylated lanolin
OF THE PREFERRED EMBODIMENTS The sizing compounds contemplated for use herein are the cyclic dicarboxylic acid anhydrides containing hydrophobic substitution. Those substituted cyclic dicarboxylic ac... Read More
Inventors: Mazzarella, Emil D.; Maliczyszyn, Walter; Atkinson, Jeffrey;, Assignee: National Starch and Chemical Corporation (Bridgewater, NJ) |
Nanoscale modulation doping method
In accordance with the present invention, a nanoscale modulation doping method combines a focused ion beam deposition of dopant ions, along with methods for channeling and then selectively de-channeli... Read More
Inventors: Petroff, Pierre M.;, Assignee: University of California Office of Technology Transfer (Alameda, CA) |
Creatine kinase isoenzyme electrophoretic technique and improved creatine kinase isoenzyme reagent for use therein
The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 1. A creatinine kinase reagent of the type comprising a buffer, creatinine phosphate, ad... Read More
Inventors: Lee, Robert T. Y.;, Assignee: Beckman Instruments, Inc. (Fullerton, CA) |
Gold recovery system
The invention is a process for recovering gold from dilute aqueous solution using an electrolytic recovery cell. The dilute aqueous solution is typically the rinse water in a gold electroplating proc... Read More
Inventors: Kim, Jung T.; Turner, Dennis R.;, Assignee: Bell Telephone Laboratories, Incorporated (Murray Hill, NJ) |
Method of patterning a thick resist layer of polymeric plastic
What is claimed is: 1. A method of forming in a first thick layer of a polymeric plastic overlying a surface of a substrate, an opening having a pair of opposed sides spaced apart by a predetermined d... Read More
Inventors: Griffing, Bruce F.;, Assignee: General Electric Company (Schenectady, NY) |
Photographic light-sensitive material
OF THE INVENTION Examples of ethylenically unsaturated monomers include ethylene, propylene, 1-butene, isobutene, styrene, chloromethylstyrene, hydroxymethylstyrene, sodium vinylbenzenesulfonate, sod... Read More
Inventors: Nakamura, Taku; Hirano, Mitsunori; Ogawa, Masasi; Ishigaki, Kunio;, Assignee: Fuji Photo Film Co., Ltd. (Kanagawa, JP) |
Method of manufacturing a semiconductor device
What is claimed is: 1. In a method of manufacturing a semiconductor device comprising the steps of forming a layer on a substrate, locally covering said layer with an organic lacquer layer, and plasma... Read More
Inventors: Sanders, Franciscus H. M.; Sanders, Jozef A. M.; Dieleman, Jan;, Assignee: U.S. Philips Corporation (New York, NY) |
Surface-treated aluminum alloy substrates for magnetic disks
What is claimed is: 1. A method for treating surfaces of magnetic disk substrates of aluminum alloy with an anodic oxide film on the surfaces thereof to render said surfaces heat resistant and substan... Read More
Inventors: Usui, Eiki; Kawaguchi, Masahiro;, Assignee: Kabushiki Kaisha Kobe Seiko Sho (Kobe, JP) |
Method for making integrated circuit with C-MOS logic, bipolar driver and polysilicon resistors
An integrated circuit is made on a P-type silicon crystal wafer having grown on a face thereof an epitaxial layer of N-type. Electrical components formed in the epitaxial layer include a complimentary... Read More
Inventors: Miles, Steven W.; Emerald, Paul R.;, Assignee: Sprague Electric Company (North Adams, MA) |
Method of making integrated circuits employing proton-bombarded AlGaAs layers
With reference now to FIG. 1, there is shown a graph of resistivity versus proton bombardment dose for n-type GaAs and p-type GaAs. See B. R. Pruniaux et al, Second International Conference, Ion Impl... Read More
Inventors: Focht, Marlin W.; Koszi, Louis A.; Schwartz, Bertram;, Assignee: AT&T Bell Laboratories (Murray Hill, NJ) |
Extractive distillation of hydrocarbon mixtures
1. A process for separation of a feed mixture of hydrocarbons having different degrees of unsaturation which comprises: introducing the feed mixture and a selective solvent mixture comprising sulfolan... Read More
Inventors: Haskell, Donald M.;, Assignee: Phillips Petroleum Company (Bartlesville, OK) |
Coaxial type gas-flow laser device
An object of this invention is to provide a coaxial type gas laser device producing a stable glow discharge and having a high overall efficiency. According to a preferred embodiment of this invention,... Read More
Inventors: Sasaki, Kouji; Sugawara, Hiroyuki; Kuwabara, Kouji; Shirakura, Toshiharu; Takemori, Satoshi; Ikemoto, Norio;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Photoelectric conversion device
An object of the present invention is to provide an improved photoelectric conversion device capable of solving the above problems. Another object of the present invention is to provide a photoelectri... Read More
Inventors: Sugawa, Shigetoshi; Tanaka, Nobuyoshi; Suzuki, Toshiji;, Assignee: Canon Kabushiki Kaisha (JP) |
Semiconductor diode with high turn on and breakdown voltages
The general purpose of this invention is to provide a high-power Schottky diode having a Schottky barrier height substantially greater than that found in current Schottky diodes. According to one aspe... Read More
Inventors: Han, Weiyu; Newman, Peter G.;, Assignee: The United States of America as represented by the Secretary of the Army (Washington, DC) |
Solid-state image pickup device with photographic sensitivity characteristics
It is therefore an object of the present invention to provide a solid-state image pickup device which overcomes the prior art disadvantages described above and which develops a broader dynamic range. ... Read More
Inventors: Konda, Ryuji;, Assignee: Fuji Photo Film Co., Ltd. (Kawagawa, JP) |
Semiconductor device for use in an improved image pickup apparatus
The present invention intends to solve the above problems. It is an object of the invention to provide a semiconductor device in which a diffusion current in the lateral direction in a base can be blo... Read More
Inventors: Morishita, Masakazu;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Bit budget estimation method and device for variable word length encoders
I claim: 1. A process for estimating a bit budget in a circuit for compressing digital data, which data is represented by N-bit coded samples, said process comprising: providing the probabilities of r... Read More
Inventors: Yassa, Fathy;, Assignee: Thomson multimedia S.A. (Courbevoie, FR) |
Formation of dual polarity source/drain extensions in lateral complementary channel MOS architectures
In accordance with the present invention, the number of additional processing steps that are dedicated exclusively to the formation of one type of increased voltage device, such as a dual drain extens... Read More
Inventors: Beasom, James D.;, Assignee: Harris Corporation (Melbourne, FL) |
Silicided MOS transistor
Both arsenic and phosphorus are implanted to form the drain of an N-channel transistor. Preferably the phosphorus is implanted in a dose no larger than the arsenic. Since the two implants are identica... Read More
Inventors: Haken, Roger A.; Chapman, Richard A.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
N-channel single polysilicon level EPROM cell
The object of the present invention is to accomplish a process for obtaining a single polysilicon level EPROM cell with the floating gate partially superimposed over double doped source and drain regi... Read More
Inventors: Maurelli, Alfonso; Riva, Carlo;, Assignee: SGS-Thomson Microelectronics s.r.l. (Milan, IT) |
N-well resistor as a ballast resistor for output MOSFET
In accordance with the preferred embodiment of the present invention, a resistor formed in a well adjacent to a transistor serves as a ballast resistor for the transistor. The transistor is formed in ... Read More
Inventors: Jiang, Chun;, Assignee: VLSI Technology, Inc. (San Jose, CA) |
Method of making a resistor utilizing a polysilicon plug formed with a high aspect ratio
An object of the present invention is to provide a method of making a resistor in an integrated circuit with a limited layout area. Another object of the present invention is to provide a method of ac... Read More
Inventors: Chen, Min-Liang; Chu, Chih-Hsun;, Assignee: Mosel Vitelic Inc. (Hsinchu, TW) |
Thin film detector of ultraviolet radiation, with high spectral selectivity option
We claim: 1. A photodetector effective in the ultraviolet region of the spectrum, comprising: a substrate; a first electrode on said substrate; a second electrode spaced from said first electrode; and... Read More
Inventors: de Cesare, Giampiero; Irrera, Fernanda; Palma, Fabrizio;, Assignee: Universita Degli Studi Di Roma "La Sapienza" (Rome, IT) |
Analogue misfet with threshold voltage adjuster
In view of the aforesaid aspects, it is an object of the present invention to provide a metal-insulator-semiconductor (MIS) device and a solid-state imaging device using the MIS device in which a pote... Read More
Inventors: Hirota, Isao;, Assignee: Sony Corporation (Tokyo, JP) |
Semiconductor device including several transistors and method of manufacturing the same
The present invention has been made in view of the above problem. An object of the present invention is to provide a semiconductor device which is manufactured by a wafer process speedily performed at... Read More
Inventors: Muramoto, Hidetoshi; Isobe, Yoshihiko;, Assignee: Denso Corporation (Kariya, JP) |
Gate commutated turn-off semiconductor device
The present invention is directed to a gate commutated turn-off semiconductor device. According to a first aspect of the present invention, the gate commutated turn-off semiconductor device comprises:... Read More
Inventors: Taguchi, Kazunori;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Quantum Computing 
