Photo-erasable data processing forms
OF THE INVENTION The present invention relates in general to a data processing form for use with photo-sensing apparatus that detect the presence of indicia at indicia-receiving locations on the form... Read More
Inventors: Nohr, Ronald Sinclair; MacDonald, John Gavin; Mosehauer, Michael Wilfred;, Assignee: Kimberly-Clark Worldwide, Inc. (Neenah, WI) |
Colorant stabilizers
OF THE INVENTION This application is directed to compositions and methods for stabilizing colorants against radiation including radiation in the visible wavelength range. The compositions and methods... Read More
Inventors: Nohr, Ronald Sinclair; MacDonald, John Gavin;, Assignee: |
.alpha.-aminoacetophenone photoinitiators
What is claimed is: 1. Compounds of the formula I, II, III or IV wherein a is an integer 1, 2 or 4; Ar is a phenyl, biphenyl or benzoylphenyl group, which is unsubstituted or substituted by 1 to 5 of ... Read More
Inventors: Ohwa, Masaki; Yamoto, Hitoshi; Birbaum, Jean-Luc; Nakashima, Hiroko; Matsumoto, Akira; Oka, Hidetaka;, Assignee: Ciba Specialty Chemicals Corporation (Tarrytown, NY) |
Inkjet printhead with top plate bubble management
Since bubbles tend to grow and expand into less constraining regions, the present invention provides grooves or depressions in a top plate that extend from the bubble collection area near the firing c... Read More
Inventors: Miller, Michael D.; Hume, Garrard;, Assignee: Hewlett-Packard Company (Palo Alto, CA) |
Semiconductor device having multilayer interconnection structure and method of making the same
The object of the present invention is to provide a semiconductor device with a copper diffusion preventing film having high barrier properties, and a method of making the semiconductor device. To att... Read More
Inventors: Fukiage, Noriaki;, Assignee: Tokyo Electron Limited (Tokyo, JP) |
Methods of forming layers over substrates
In one aspect, the invention pertains to a method of forming a layer of material on a substrate. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. T... Read More
Inventors: Sarigiannis, Demetrius; Derderian, Garo J.; Basceri, Cem;, Assignee: Micron Technology, Inc. (Boise, ID) |
Semiconductor integrated circuit with photo diode
OF THE PREFERRED EMBODIMENTS Referring to FIG. 1 a photo diode 11 and an NPN transistor 12 are formed on a common P-type single crystal silicon semiconductor substrate 13. Substrate 13 is doped to a ... Read More
Inventors: Mita, Keizi; Takahashi, Tsuyoshi; Ohkoda, Toshiyuki; Takada, Tadayoshi;, Assignee: Sanyo Electric Co., Ltd. (Moriguchi, JP) |
Monolithic integrated semiconductor device of semiconductor laser and optical waveguide
It is hence a primary object of this invention to present a semiconductor device in a construction wherein the active layer and optical waveguide are coupled together at high efficiency without causin... Read More
Inventors: Uno, Tomoaki; Ogura, Mototsugu;, Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP) |
Semiconductor quantum well electron and hole waveguides
FIG. 1 shows, in pictorial form, the energy level diagram and the structure of asymmetric, quantum well slab waveguide 100. We will use the following notation in describing this embodiment of the pre... Read More
Inventors: Gaylord, Thomas K.; Brennan, Kevin F.; Glytsis, Elias N.;, Assignee: Georgia Tech Research Corporation (Atlanta, GA) |
Light responsive heterojunction semiconductor pn element
It is an object of the present invention to provide a light generation element having a high initial efficiency and superior radiation resistance. Other objects and advantages of the present invention... Read More
Inventors: Ogasawara, Nobuyoshi; Mitsui, Kotaro;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Optical digital memory system
OF THE INVENTION Referring now to the drawings wherein like reference numerals refer to like components throughout, reference is first made to FIG. 1. Shown thereat is a simplified block diagram depi... Read More
Inventors: Edelman, Seymour;, Assignee: |
Method of making a compound semiconductor laser
An object of the invention is the devising of a way of regulating epitaxial growth so that it will proceed to the vicinity of a given line and there be temporarily arrested without recourse to the use... Read More
Inventors: Turley, Stephen E. H.;, Assignee: ITT Industries, Inc. (New York, NY) |
Compact, real time tape drive system
In accordance with the present invention, the foregoing objectives are achieved by a microprocessor implementation of the encoding and decoding functions, as outlined hereinabove, and employing simpli... Read More
Inventors: Cogley, Jr., John R.;, Assignee: Qualstar Corporation (Chatsworth, CA) |
Symmetrical waveguide coupler
It is an object of the present invention to provide a multiplexer or demultiplexer, respectively, for signals of different wavelengths which is of simple design for the above-described applications. T... Read More
Inventors: Unger, Hans-Georg;, Assignee: ANT Nachrichtentechnik GmbH (Backnang, DE) |
Optical waveguide device with two predetermined wavelength, polarization independent, directional coupler switches
Accordingly, it is an object of the invention to provide an optical waveguide device in which optical signals having different wavelengths are switched selectively at low cost. According to a feature ... Read More
Inventors: Tanisawa, Yasuhisa;, Assignee: NEC Corporation (Tokyo, JP) |
Integrated optical proximity coupler
We claim: 1. An integrated optical device for proximity coupling between two waveguides in order to separate or combine signals of different wavelengths, having a substrate and waveguides incorporated... Read More
Inventors: Lerminiaux, Christian; Paris, Bertrand;, Assignee: Corning Incorporated (Corning, NY) |
Optical head used in optical information processor
In a conventional device of this sort, a semiconductor laser has been used as a light source, and reflected beams of light from an optical information recording medium (a photomagnetic disk in this de... Read More
Inventors: Kando, Hidehiko;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Position detecting method and device therefor as well as aligning device
With respect to the grating pitches of the diffraction grating which give direct influences to the signal detecting range and the detecting resolution (both are in a contrary relation each other as sa... Read More
Inventors: Shibata, Hiromasa;, Assignee: Sortec Corporation (Tokyo, JP) |
Planar optical scanning head having deficiency-correcting grating
I claim: 1. An optical head for scanning a surface, which head is provided with a source supplying a radiation beam, an input grating having a periodic grating structure for coupling the radiation bea... Read More
Inventors: Opheij, Willem G.;, Assignee: U.S. Philips Corporation (New York, NY) |
Electrical and fiber-optic connector
An object of the invention is, therefore, to provide a hybrid fiber-optic and electrical connector having a plurality of ferrules closely packed and accurately positioned for alignment with a second c... Read More
Inventors: Ames, Gregory H.; Morency, Roger L.;, Assignee: The United States of America as represented by the Secretary of the Navy (Washington, DC) |
Method of manufacturing multi-chip package
It is an object of the present invention to provide a method of manufacturing a multi-chip package which allows a short manufacturing period, facilitates design and a modification of a wiring pattern,... Read More
Inventors: Haga, Akira;, Assignee: NEC Corporation (JP) |
Metal silicide texturizing technique
The present invention is a process for texturizing a semiconductive material coated with a metal silicide. For example, it is desirable to texturize a polycrystalline silicon (polysilicon or poly) lay... Read More
Inventors: Chhabra, Navjot; Sandhu, Gurtej S.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Multilayer interconnection structure for a semiconductor device
In view of the foregoing, an object of the present invention is to provide an interconnection structure of a semiconductor device allowing the formation of a through hole of a desired dimension with r... Read More
Inventors: Ishii, Atsushi; Takata, Yoshifumi; Ohsaki, Akihiko; Maekawa, Kazuyoshi;, Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Method for production of SOI transistor device having a storage cell
A first object of the present invention is to provide a method of production of an SOI transistor device etc. wherein the method of bonding of the substrates can prevent the occurrence of air bubbles,... Read More
Inventors: Satoh, Hiroshi; Ohokubo, Yasunori; Matsushita, Takeshi; Nishihara, Toshiyuki; Hashimoto, Makoto;, Assignee: Sony Corporation (JP) |
Monolithic integrated optoelectronic semiconductor component and process for manufacturing the same
It is therefore the task of the invention to find an integrated optoelectronic semiconductor component that is able to equally process light signals of any polarization direction. It is furthermore th... Read More
Inventors: Laube, Gert; Schilling, Michael; Wunstel, Klaus; Idler, Wilfried; Grosskopf, Karin; Lach, Eugen;, Assignee: Alcatel Alsthom Compagnie Generale d'Electricite (FR) |
Planar waveguides
An object of the invention is to minimise or to overcome these advantages. A further object of the invention is to provide an improved method of forming a cladding layer on a planar wave guide. Accord... Read More
Inventors: Ojha, Sureshchandra Mishrilal; Stagg, Jonathan Paul;, Assignee: Northern Telecom Limited (Quebec, CA) |
Semiconductor integrated circuit arrangement fabrication method
What is claimed is: 1. An integrated circuit device fabrication method, comprising the following steps: (a) generating a plasma, which includes an inert gas excited to a metastable excited state to pr... Read More
Inventors: Tokunaga, Takafumi; Okudaira, Sadayuki; Mizutani, Tatsumi; Tago, Kazutami; Kazumi, Hideyuki; Yoshioka, Ken;, Assignee: Hitachi, Ltd. (Tokyo, JP) |
Vapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrate
An object of the present invention is to provide a vapor deposition method for simultaneously forming an epitaxial silicon layer over a surface of a silicon substrate, and a polysilicon layer over a s... Read More
Inventors: Mieno, Fumitake; Kurita, Kazuyuki; Nakamura, Shinji; Shimizu, Atuo;, Assignee: Fujitsu Limited (Kawasaki) |
Silicon layer having increased surface area and method for manufacturing
A silicon layer having an increased surface area in a highly granulated form, and a method for manufacturing such a layer of the present invention is defined by the claims with a specific embodiment s... Read More
Inventors: Kim, Jae K.; Chung, In S.;, Assignee: Hyundai Electronics Industries Co., Ltd. (Kyungki, KR) |
Process for forming a thin oxide layer
A process for fabricating a high integrity silicon dioxide layer is described. The oxide formed can be used as a sub-100 .ANG. gate oxide. Since the oxide shows low defects and effectively oxidizes sh... Read More
Inventors: Chau, Robert S. K.; Hargrove, William L.; Yau, Leopoldo D.;, Assignee: Intel Corporation (Santa Clara, CA) |
Quantum Computing 
