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Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
| Details |
Inventors: Schatz, Douglas S.; Scholl, Richard A.;
Assignee: Advanced Energy Industries, Inc. (Fort Collins, CO)
Primary Examiner: Nguyen; Nam
Assistant Examiner: McDonald; Rodney G.
Attorney, Agent or Firm: Santangelo Law Offices, P.C.
A method and an apparatus are disclosed for sputter deposition of an insulating material on a substrate in a continuous mode of operation. A novel design for an anode assembly and driving power supply is disclosed to permit this. Single or multiple anodes are used, which at any given time may be biased negatively with respect to the plasma, so that any insulating material which may have been deposited thereupon may be sputtered away so as to provide a clean positive anode to the system, and at least for some period of time is biased positively so that it acts as an anode. The removal of any insulating material which may have formed on the anode structure permits its continuing effective use in collecting electrons from the plasma when it is biased positively, and therefore its continuing effective use as an anode for the system, permitting continuous operation of the system. |
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As can be easily understood, the basic concepts of the present invention may be embodied in a variety of ways.
It involves both processes or methods as well as devices to accomplish such.
In addition, while some specific circuitry is disclosed, it should be understood that these not only accomplish certain methods but also can be varied in a number of ways.
Importantly, as to all of the foregoing, all of these facets should be understood to be encompassed by this disclosure.
FIG.
1 shows a conventional single target system.
In this case there may exist a discrete anode 5 or an alternative connection may be made whereby the positive lead of sputtering power supply 6 is connected to the chamber 1 rather than to anode 5.
In this case anode 5 may be dispensed with.
The alternative connection is shown in dotted lines in FIG.
1.
Ions are attracted to target 4 from plasma 2 and upon striking target 4 cause sputtered atoms to be ejected from target 4 in accordance with well-known principles.
These sputtered atoms traverse the space between the target and the substrate 3 and deposit there, creating a thin film of the target material thereupon.
Should the target be metallic and the background (sputtering) gas be an inert gas such as Argon, depositing metal films on substrate 3, there are little problems with a system configured such as in FIG.
1.
If, however, a reactive gas is introduced into chamber 1 in order to create a chemical compound on the target, and if the reaction product is an electrical insulator, a problem surfaces.
Since the insulating film will coat every surface in the chamber 1, it will eventually coat the anode (or in the case of the alternative connection, the chamber walls).
As this happens the conduction path for the electrons streaming from the plasma 2 is coated over, and the process cannot be sustained.
This is what has been termed the "disappearing anode" problem.
While it is possible to open chamber 1 and mechanically scrub off the offending insulating layer from the anode or the chamber walls to create a new metallic surface, this is costly and time consuming and it would be desirable to avoid having to do so
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