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High-T.sub.c superconductor quantum interference devices
| Details |
Inventors: De, Dilip K.;
Assignee: International Superconductor Corp. (Riverdale, NY)
Primary Examiner: Ryan; Patrick J.
Assistant Examiner:
Attorney, Agent or Firm: Dubno; Herbert
High T.sub.c superconductor quantum interferometric devices are disclosed. Such devices are especially suited for detecting small changes and spatial variation in magnetic field. Such detection finds important application in NDE evaluation of metals, in the evaulation of magnetic susceptibilities and in magnetic resonance spectrometers. |
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DETAILED DESCRIPTION I claim: 1.
A superconductive quantum interferometric device for sensing a characteristic of a magnetic field, comprising: a substrate having a surface, said substrate being selected from the group which consists of strontium titanate, aluminum oxide, sapphire, ZrO.
sub.
2 and mixtures thereof; a coating of MgO on said surface of said substrate; two identical thin-strip films of a high-critical temperature superconductor on said coating, each of said films having a pair of mutually parallel arms in the form of superconductor strips extending toward and aligned with superconductor strips forming corresponding arms of the other thin-strip film, and a crossbar strip connecting the arms of each thin-strip film at right angles to said arms, said high-critical-temperature superconductor being selected from the group which consists of yttrium-barium-copper-oxides, bismuth-strontium-calcium-copper-oxides, thallium-calcium-copper-oxides, thallium-barium-copper-oxides, thallium-barium-calcium-copper-oxides, barium oxide:potassium oxide:bismuth oxides, and calcium oxide:zinc oxide: iron oxides.
; and insulating films on said coating between corresponding free ends of said arms thin-strip films, said insulating films being composed of a material selected from the group which consists of silicon dioxide, silicon nitride, magnesium oxide and mixtures thereof.
2.
The superconductive quantum interferometric device defined in claim 1, further comprising a protective coating of an insulating material on said films and said substrate.
3.
The superconductive quantum interferometric device defined in claim 4 wherein the insulating films have thicknesses of substantially 0.
005 to substantially 5.
0 microns, and widths between the respective arms of substantially 0.
005 to substantially 5.
0 mm.
4.
The superconductive quantum interferometric device defined in claim 6 wherein said coating of insulating material is composed of polytetrafluoroethylene.
Description:
FIELD OF INVENTION This invention relates to superconducting quantum interferometric devices
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