Method for forming platinum silicide plugs

DETAILED DESCRIPTION Therefore, an object of the present invention is to solve the above problem encountered in the prior art and to provide a method for forming silicide plugs suitable for use in very large scale integrated semiconductor devices having large aspect ratios.
In accordance with the present invention, the above object can be accomplished by providing a method for forming a silicide plug, comprising the steps of: patterning an insulating film deposited on a silicon substrate, so as to form a contact hole; depositing a blanket silicon film on the entire resulting structure thick enough so as to completely fill the contact hole; subjecting the blanket silicon film to etch back, so as to form a silicon plug; depositing a thin platinum film on the entire resulting structure; carrying out a heat treatment process, so as to form platinum silicide plug in the contact hole; and removing the non-reacted platinum film so as to form a silicide plug in the contact hole.
According to another definition of this invention disclosed herein is a method for forming a silicide plug, which includes the steps of: a) providing a silicon substrate on which a conductive layer is formed; b) forming an insulating layer on the silicon substrate and the conductive layer; c) patterning the insulating layer to form a contact hole on the conductive layer; d) exposing the conductive; layer to air to form a thin (under 70 .
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thick) native oxide layer at the surface of the conductive layer; e) forming a blanket polysilicon film on the entire resulting structure thick enough as to completely fill the contact holes; f) etching back the blanket polysilicon film to expose the surface of the insulating layer, thereby forming a silicon plug in the contact hole; g) forming a platinum layer on the silicon plug and the insulating layer; h) performing heat treatment to convert the silicon plug to a platinum silicide plug; and i) removing the remaining platinum layer.
The above and other objects and advantages of the present invention will become more apparent as the following description proceeds