Two-dimensional, Josephson-array, voltage-tunable, high-frequency oscillator

DETAILED DESCRIPTION What is claimed is: 1.
A two-dimensional array of superconducting Josephson junctions comprising: a plurality M of horizontal rows, each said horizontal row containing a plurality N of Josephson junctions of a first group, said Josephson junctions arranged on each said horizontal row so that N vertical columns of Josephson junctions are formed in the array; and a plurality of horizontal conductors connecting adjacent Josephson junctions in the same horizontal row; a plurality of vertical conductors connecting Josephson junctions of adjacent horizontal rows and intersecting with said horizontal conductors; DC biasing means arranged so that the voltage on each said Josephson junction of said first group along a horizontal row is uniform for each horizontal row of Josephson junctions in said array; whereby each said Josephson junction of said array is mutually phased locked when excited by an external DC bias.
2.
The array of claim 1 wherein said Josephson junctions are of the superconductor-insulator-superconductor type.
3.
The array of claim 2 wherein each said Josephson junction comprises an upper superconducting electrode and a lower superconducting electrode, said superconducting electrodes being separated from each other by a first insulator.
4.
The array of claim 3 wherein each said Josephson junction is connected to a corresponding intersection of a horizontal conductor and a vertical conductor by a superconducting shunt extending from said upper electrode to said intersection, and by a shunt resistor extending from said lower electrode to said intersection.
5.
The array of claim 4 wherein said superconducting shunt is covered by an insulating layer, and said insulating layer is covered by a superconducting ground plane.
6.
The array of claim 5 wherein said superconducting electrodes, said superconducting shunt and said superconducting ground plane are selected from a group of materials comprising Nb and Pb-In-Au, said first insulator comprising Al.
sub.
2 O.
sub.
3, said shunt resistor comprising In-Au, and said insulating layer comprising Si0