Semiconductor memory device

DETAILED DESCRIPTION An object of the present invention is to provide a random access memory, the access time of which is not delayed if a thin gate oxide film is used in the MOS field effect transistors included in the semiconductor memory device using word lines or bit lines made from a polycrystalline semiconductor material such as polycrystalline silicon.
Another object of the present invention is to provide a random access memory, the access time of which is not delayed if the long word lines or bit lines are used when the memory capacity is increased and/or the semiconductor chip becomes a large size.
The above-mentioned objects can be achieved by a semiconductor memory device which is comprised of a plurality of bit lines, a plurality of memory cells each of which is connected to a different one of the bit lines, a plurality of common word lines each of which is connected to the memory cells via a transmission gate, a semiconductor memory device comprising at least one amplifier between two memory cells which is connected to the word line or the bit line so as to prevent an increase of the access time to each memory cell.
Further features and advantages of the present invention will be apparent from the ensuing description with reference to the accompanying drawings, to which, however, the scope of the invention is in no way limited.