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Fluid spreading apparatus
In accordance with the present invention a new and improved fluid spreading apparatus is disclosed as including a non-swinging or fixed spray bar carried transversely on ...
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Device in or for high-pressure cleaning units for heating the water by circulation
I claim: 1. High-pressure cleaning apparatus having two operating modes comprising: an ejection nozzle for discharging fluid; a high-pressure pump having delivery and ...
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High voltage MOS structure
The present invention relates generally to insulated gate field effect transistors and more specifically to an improved high voltage insulated gate field effect ...
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Method of making self-aligned remote polysilicon contacts
In accordance with the present invention, shallow source and drain contacts are produced by the steps of (1) depositing a polysilicon layer over the entire surface of a ...
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Self-aligned MOSFET gate/source/drain salicide formation
The present invention provides a method of fabricating a MOSFET device structure in a silicon substrate. The MOSFET device structure includes planarized trench isolation ...
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Raised source/drain using recess etch of polysilicon
Accordingly, it is a primary object of the present invention to provide a preferred process for making logic devices with raised source/drain junctions using recess etch ...
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Method of producing a metal oxide semiconductor device with raised source/drain
There is a need for a method of making a semiconductor device with raised source/drain structure, in a readily manufacturable process that is cost effective. This and ...
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Method for forming shallow source/drain extension for MOS transistor
OF THE INVENTION". BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic diagram of a semiconductor device made according to the present invention, shown in combination ...
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Laser texturing
The present invention is directed to providing a contactless technique for imparting a texture to a surface by promoting a chemical etching reaction between a gaseous ...
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Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
FIG. 2 shows a trenched DMOS transistor structure in accordance with the present invention. The substrate (drain) region 10 is in the lower portion of the semiconductor ...
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Semiconductor manufacture 
