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Buffer layers to enhance the C-axis growth of Bi4Ti3O12 thin film on high temperature iridium-composite electrode
| Details |
Inventors: Zhang, Fengyan; Zhuang, Wei-Wei; Hsu, Sheng Teng;
Assignee: Sharp Laboratories of America, Inc. (Camas, WA)
Primary Examiner: Nhu; David
Assistant Examiner:
Attorney, Agent or Firm: Ripma, David C.; Curtin, Joseph P.;;
A method of fabricating a ferroelectric thin film on an iridium-composite electrode in an integrated circuit device includes preparing a substrate; depositing an iridium-composite bottom electrode on the substrate; annealing the bottom electrode in a first annealing step; depositing a buffer layer on the bottom electrode, including depositing a layer of material taken from the group of materials consisting of HfO2, ZrO2, TiO2, LaOx, La-Al-O, Ti-Al-O, Hf-Al-O, Zr-Al-O, Hf-Zr-O, Zr-Ti-O, Hf-Ti-O, La-Zr-O, La-Hf-O, and La-Ti-O; annealing the buffer layer in a second annealing step; depositing a layer of Bi4Ti3O12, to a thickness of between about 20 nm to 500 nm, on the buffer layer; annealing the ferroelectric layer in a third annealing step; and completing the integrated circuit device. |
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DETAILED DESCRIPTION A method of fabricating a ferroelectric thin film on an iridium-composite electrode in an integrated circuit device includes preparing a substrate; depositing an iridium-composite bottom electrode on the substrate; annealing the bottom electrode in a first annealing step; depositing a buffer layer on the bottom electrode, including depositing a layer of material taken from the group of materials consisting of HfO2, ZrO2, TiO2, LaOx, La-Al-O, Ti-Al-O, Hf-Al-O, Zr-Al-O, Hf-Zr-O, Zr-Ti-O, Hf-Ti-O, La-Zr-O, La-Hf-O, and La-Ti-O; annealing the buffer layer in a second annealing step; depositing a layer of Bi4Ti3O12, to a thickness of between about 20 nm to 500 nm, on the buffer layer; annealing the ferroelectric layer in a third annealing step; and completing the integrated circuit device.
It is an object of the invention to provide a method of growing a buffer layer first on an iridium-composite bottom electrode before growing a BTO thin film thereon, in order to enhance the growth of C-axis BTO thin film.
This summary and objectives of the invention are provided to enable quick comprehension of the nature of the invention.
A more thorough understanding of the invention may be obtained by reference to the following detailed description of the preferred embodiment of the invention in connection with the drawings.
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Semiconductor manufacture 
