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Capacitor having perovskite series dielectric film containing copper and manufacturing method thereof
| Details |
Inventors: Park, Won-mo;
Assignee: Samsung Electronics Co., Ltd. (Suwon, KR)
Primary Examiner: Thomas; Tom
Assistant Examiner: Vu; Quang
Attorney, Agent or Firm: Marger Johnson & McCollom, PC
A capacitor having a perovskite series dielectric film, and manufacturing method thereof are provided. The perovskite series dielectric film capacitor is characterized in that the perovskite series dielectric film contains copper. The method of manufacturing the perovskite series dielectric film which contains copper includes forming the perovskite series dielectric film on a lower electrode, forming a Cu.sub.X O film on the perovskite series dielectric film, and permitting Cu.sub.X O or copper of the Cu.sub.X O film to penetrate the perovskite series dielectric film preferably by a heat treatment. In the perovskite series dielectric film capacitor, Cu.sub.X O or copper penetrates the grain boundary of the perovskite series dielectric film having a columnar crystal structure, thereby improving a leakage current characteristic of the perovskite series dielectric film. |
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DETAILED DESCRIPTION To solve the above problems, the present invention provides a capacitor having a perovskite series dielectric film, in which the leakage current characteristics are improved.
In addition, the present invention provides a simplified method of manufacturing a perovskite series dielectric capacitor which improves the leakage current characteristics of the dielectric film.
Accordingly, the present invention reduces leakage currents by containing Cu.
sub.
X O or copper in a perovskite series dielectric film.
That is, a capacitor according to the present invention includes a perovskite series dielectric film disposed between upper and lower electrodes made of conductive material, wherein the perovskite series dielectric film contains Cu.
sub.
X O or copper.
The Cu.
sub.
X O or copper is preferably contained in the grain boundary of the perovskite series dielectric film.
More preferably, the perovskite series dielectric film is a barium strontium titanate (BST) film or a PZT film.
Also, the present invention provides a method of manufacturing a perovskite series dielectric film capacitor, including penetrating the perovskite series dielectric film with Cu.
sub.
x O or copper.
According to a method of manufacturing a general perovskite series dielectric film capacitor, after depositing a conductive material on a substrate to form a lower electrode and depositing a perovskite series dielectric film on the lower electrode, a conductive material is deposited on the perovskite series dielectric film to form an upper electrode.
The method of manufacturing the perovskite series dielectric film capacitor according to the invention has steps similar to the method of manufacturing the general perovskite series dielectric film capacitor, further including unique steps of depositing Cu.
sub.
x O (x=1 or 2) on the perovskite series dielectric film to form a Cu.
sub.
x O film, and performing a heat treatment on the substrate to permit Cu.
sub.
x O or copper of the Cu.
sub.
x O film to penetrate the perovskite series dielectric film
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Semiconductor manufacture 
