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Composition and process for forming electrically insulating thin films
| Details |
Inventors: Kobayashi, Akihiko; Mine, Katsutoshi; Nakamura, Takashi; Sasaki, Motoshi; Sawa, Kiyotaka;
Assignee: Dow Corning Toray Silicone Co., Ltd. (Tokyo, JP)
Primary Examiner: Marquis; Melvyn I.
Assistant Examiner:
Attorney, Agent or Firm: Severance; Severance K., Gobrogge; Roger E., Streu; Rick D.
To provide a composition for the formation of insulating films that can form an insulating film having a low dielectric constant. The composition comprises (A) an electrically insulating curable resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) at least two solvents: (B)(i) a solvent capable of dissolving resin (A) and (B)(ii) a solvent whose boiling point or vapor pressure curve differs from that of solvent (B)(i) or whose affinity for resin (A) differs from that of solvent (B)(i). Also claimed is a method for forming a insulating films that have a dielectric constant of less than 2.7. |
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DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an insulating thin film-forming composition that comprises (A) a resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) a solvent mixture comprising (i) a solvent capable of dissolving resin (A) and (ii) a solvent whose boiling point or vapor pressure curve or affinity for resin (A) differs from that of solvent (i).
Resin (A) can be inorganic or organic and is not critical as long as it is solvent soluble, can be cured by heating after its application, and provides insulation.
The resin can be exemplified by the partial hydrolyzates of alkoxysilanes, by inorganic resins that are silica precursor resins such as hydrogen silsesquioxane resin, and by organic resins such as polyimide resins, fluorocarbon resins, benzocyclobutene resins, and fluorinated polyallyl ethers.
This resin can take the form of a single resin or a mixture of two or more resins.
Silica precursor resins, with their ability to cure into silica, provide particularly good electrical insulating properties and are therefore preferred.
Among the silica precursor resins, hydrogen silscsquioxane resins, which can be used in a non-etchback process, are particularly preferred.
The hydrogen silsesquioxane resin used in the present invention is polysiloxane whose main skeleton is composed of the trifunctional siloxane unit HSiO.
sub.
3/2 and is a polymer with the general formula (HSiO.
sub.
3/2).
sub.
n in which the subscript n is a positive integer.
From the standpoint of molecular structure, this hydrogen silsesquioxane resin includes so-called ladder-type polysiloxanes and cage-type polysiloxanes.
The terminals of the ladder-type polysiloxanes can be endblocked by, for example, the hydroxyl group, a triorganosiloxy group such as the trimethylsiloxy group, or a diorganohydrogensiloxy group such as the dimethylhydrogensiloxy group.
Hydrogen silsesquioxane resin is known and in general can be synthesized by the hydrolysis of trichlorosilane and ensuing polycondensation (see U
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Semiconductor manufacture 
