Home | Links | Contact Us | More About Intellectual Property | Bookmark
Search patents:
Home Semiconductor manufacture Device-in-or-for-high-pressure-cleaning-units-for-heating-the-water-by-circulation

 DMOS power transistors with reduced number of contacts using integrated body-source connections
In accordance with the present invention, two topologically different microcells are provided. Each ...


 Trench depletion MOSFET
The present invention is a trench power MOSFET with a unique structure which overcomes the above-...


 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST*** *** NO IMAGES AVAILABLE***
Description:...


 Method for forming a MOSFET with substrate source contact
Accordingly, it is an object of the present invention to provide an improved means and method for MO...


 Integrable MOS and IGBT devices having trench gate structure
OF ILLUSTRATIVE EMBODIMENTS FIG. 3 is a section view of a power MOSFET device in accordance with ...


 Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
I claim: 1. A trench MOSFET comprising: (a) at least one pedestal, that functions as a vertically-...


 Insulated gate static induction transistor and integrated circuit including same
Therefore, an object of the present invention is to provide an insulated-gate static induction ...


 Mask surrogate semiconductor process employing dopant-opaque region
A general object of the present invention, therefore, is to provide a novel manufacturing procedure ...


 High speed, low gate/drain capacitance DMOS device
It is a purpose of the present invention to provide a new and improved method of producing high ...


 Method for the preparation of a pattern overlay accuracy-measuring mark
Therefore, it is an object of the present invention to overcome the above problems encountered in ...


 Device in or for high-pressure cleaning units for heating the water by circulation

Details
Inventors: Ostergaard, Tage V.;
Assignee: Knud Erik Westergaard (Hadsund, DK)
Primary Examiner: Kashnikow; Andres
Assistant Examiner: Edelbrock; Daniel R.
Attorney, Agent or Firm: Felfe & Lynch

In high-pressure cleaning units with heating stages, i.e. with a possibility for circulating a partial flow of the forwardly pumped water through a constricted, heat-generating nozzle (74) in a return conduit to the pump's inlet side, the problem occurs that the entire water flow circulates at high pump pressure upon temporary interruption of ejection, which causes an inexpediently high heating of the water. By the invention, apparatus is provided for sensing this situation and thus block the return conduit (70,72), so that the pressure tends to rise; in this way, however, the cleaning unit's ordinary bypass valve (12) will sense that delivery from the pump (P) is totally blocked, whereby it connects the pump in bypass state in the ordinary way through a non-constricted bypass connection (14). In this way, ejection can be interrupted temporarily without any substantial heat accumulation in the circulating water, and another advantage is that the ejection conduit itself is pressure relieved in the situation.

DETAILED DESCRIPTION I claim: 1.
High-pressure cleaning apparatus having two operating modes comprising: an ejection nozzle for discharging fluid; a high-pressure pump having delivery and suction sides; a return conduit between said delivery and suction sides of said pump and having a constricted portion for generating heat during the passage of fluid therethrough; a non-constricted bypass connection between said delivery and suction sides of said pump; a bypass valve responsive to a total interruption of water delivery from said delivery side of said pump for producing a bypass through sid non-constricted bypass connection; conduit means, including a shut-off valve, for communicating with said delivery side of said pump and with said ejection nozzle when said shut-off valve is open, thereby setting the apparatus in a first operating mode; means responsive to pressure in said conduit means for blocking any return flow through said constricted conduit portion when any discharge of fluid through said ejection nozzle is blocked when the apparatus is in said first operating mode, said pressure-responsive means comprising a differential pressure valve for feeding fluid downstream from said delivery side of said pump when said apparatus is in a second operating mode; and a pressure-loss-causing nozzle coupled to said differential pressure valve; said shut-off valve being effective, when closed and thereby setting the apparatus in said second operating mode, to close said conduit means, causing discharge fluid to flow through said pressure-loss-causing nozzle when said ejection nozzle is open; said blocking means being responsive to the pressure differential across said pressure-loss-causing nozzle for unblocking return flow through said constricted portion of said return conduit for heating the fluid flowing therethrough when the apparatus is in said second operating mode; said blocking means being effective to block return flow through said constricted portion of said return conduit when said ejection nozzle is closed when the apparatus is in said second operating mode



Related patents
  High voltage MOS structure
The present invention relates generally to insulated gate field effect transistors and more specifically to an improved high voltage insulated gate field effect ...
  Method of making self-aligned remote polysilicon contacts
In accordance with the present invention, shallow source and drain contacts are produced by the steps of (1) depositing a polysilicon layer over the entire surface of a ...
  Self-aligned MOSFET gate/source/drain salicide formation
The present invention provides a method of fabricating a MOSFET device structure in a silicon substrate. The MOSFET device structure includes planarized trench isolation ...
  Raised source/drain using recess etch of polysilicon
Accordingly, it is a primary object of the present invention to provide a preferred process for making logic devices with raised source/drain junctions using recess etch ...
  Method of producing a metal oxide semiconductor device with raised source/drain
There is a need for a method of making a semiconductor device with raised source/drain structure, in a readily manufacturable process that is cost effective. This and ...
  Method for forming shallow source/drain extension for MOS transistor
OF THE INVENTION". BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic diagram of a semiconductor device made according to the present invention, shown in combination ...
  Laser texturing
The present invention is directed to providing a contactless technique for imparting a texture to a surface by promoting a chemical etching reaction between a gaseous ...
  Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
FIG. 2 shows a trenched DMOS transistor structure in accordance with the present invention. The substrate (drain) region 10 is in the lower portion of the semiconductor ...
  Semiconductor device and power converter using same
The semiconductor device according to the present invention has a pair of main surfaces. On one main surface side, the surface of a first semiconductor region of a first ...
  Self-aligned channel stop for trench-isolated island
In accordance with the present invention, the need to provide a separation region between the trench and a device region within the island, which results in an unwanted ...

0.014

Archive: All patents - Links

Copyright (c)2006 Eipa-patents.org - All rights reserved